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CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
MTN7000A3
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| OCR Text |
...VOLT AGE---VGS(V) ID=57.5m A ID=115ma
FORWARD TRANSFER ADM ITTANCE vs DRAIN CURRENT
1000
FORWARD TRANSFER ADMITTANCE--GFS(ms)
REVERSE DRAIN CURRENT vs SOURCEDRAIN VOLTAGE
1.00
VGS=10V 100
REVERSE DRAIN CURRENT---IDR(A)
Pul... |
| Description |
N-CHANNEL MOSFET
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| File Size |
160.60K /
4 Page |
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CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
MTN7002N3
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| OCR Text |
...VOLT AGE---VGS(V) ID=57.5m A ID=115ma
FORWARD TRANSFER ADM ITTANCE vs DRAIN CURRENT
1000
FORWARD TRANSFER ADMITTANCE--GFS(ms)
REVERSE DRAIN CURRENT vs SOURCEDRAIN VOLTAGE
1.00
VGS=10V 100
REVERSE DRAIN CURRENT---IDR(A)
Pul... |
| Description |
N-CHANNEL MOSFET
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| File Size |
184.99K /
4 Page |
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it Online |
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CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
MTN7002S3
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| OCR Text |
...VOLT AGE---VGS(V) ID=57.5m A ID=115ma
FORWARD TRANSFER ADM ITTANCE vs DRAIN CURRENT
1000
FORWARD TRANSFER ADMITTANCE--GFS(ms)
REVERSE DRAIN CURRENT vs SOURCEDRAIN VOLTAGE
1.00
VGS=10V 100
REVERSE DRAIN CURRENT---IDR(A)
Pul... |
| Description |
N-CHANNEL MOSFET
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| File Size |
188.12K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M62256FP M62256E M62256
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| OCR Text |
...ee Note2) ..................... 115ma Note1. The charging current must be set according to the battery specifications. The currents used for quick charge and trickle charge are detemined by the voltage of the terminals Iset1 and Iset2 and c... |
| Description |
Single chip battery charger control IC
From old datasheet system
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| File Size |
45.40K /
9 Page |
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it Online |
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ICST[Integrated Circuit Systems]
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| Part No. |
ICS8530DYT ICS8530 ICS8530DY
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| OCR Text |
... = VCC_MAX * IEE_MAX = 3.465V * 115ma = 398.5mW Power (outputs)MAX = 30.2mW/Loaded Output pair If all outputs are loaded, the total power is 16 * 30.2mW = 483.2mW
Total Power_MAX (3.465V, with all outputs switching) = 398.5mW + 483.2mW =... |
| Description |
LOW SKEW, 1-TO-16 DIFFERENTIAL-TO-2.5V LVPECL FANOUT BUFFER
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| File Size |
102.53K /
12 Page |
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it Online |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM2N7002CX TSM2N7002
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| OCR Text |
...rent Diode Forward Voltage IS = 115ma, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% IS VSD ---1.3 115 1.5 mA V
TSM2N7002
2-3
2003/12 rev. B
SOT-23 Mechanical Drawing
A B
F
SOT-23 DIMENSION DIM A MILLIMET... |
| Description |
60V N-Channel Enhancement Mode MOSFET
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| File Size |
125.57K /
3 Page |
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it Online |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM2N7002ECX TSM2N7002E TSM2N7002ECU
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| OCR Text |
...rent Diode Forward Voltage IS = 115ma, VGS = 0V IS VSD ---0.76 115 1.5 mA V
Note : pulse test: pulse width <=300uS, duty cycle <=2% * Guaranteed by design, not subject to production testing.
TSM2N7002E
2-5
2004/12 rev. B
Typi... |
| Description |
50V N-Channel Enhancement Mode MOSFET
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| File Size |
200.01K /
5 Page |
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it Online |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM2N7002EDCU6 TSM2N7002ED
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| OCR Text |
...rent Diode Forward Voltage IS = 115ma, VGS = 0V IS VSD ---0.76 115 1.5 mA V
Note : pulse test: pulse width <=300uS, duty cycle <=2% * Guaranteed by design, not subject to production testing.
TSM2N7002ED
2-5
2004/12 rev. B
Typ... |
| Description |
50V Dual N-Channel Enhancement Mode MOSFET
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| File Size |
197.68K /
5 Page |
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it Online |
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Sirenza Microdevices, Inc.
SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
XD010-22S-D2F
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| OCR Text |
...D = 28.0V, IDQ1 = 230mA, IDQ2 = 115ma, TFlange = 25C
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no ... |
| Description |
1805-1880 MHz Class A/AB 12W Power Amplifier Module
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| File Size |
208.01K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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