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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/LB0 K4H1G0438M-UC/LB3 K4H1G0838M-UC/LB3 K4H1G0438M-UC K4H1G0438M-UC/LB0 K4H1G0438M-LA2 K4H1G0438M-UCA2 K4H1G0438M-ULA2 K4H1G0838M-LA2 K4H1G0838M-UCA2 K4H1G0838M-ULA2 K4H1G0438M-UCB0 K4H1G0438M-ULB0 K4H1G0838M-LB0 K4H1G0838M-ULB0 K4H1G0838M-UCB0 K4H1G0438M-UC0 K4H1G0838M-UC2 K4H1G0438M-UC3 K4H1G0838M-UC3 K4H1G0438M-LB3 K4H1G0438M-UCB3 K4H1G0438M-ULB3 K4H1G0838M-LB3 K4H1G0838M-UCB3 K4H1G0838M-ULB3 K4H1G0838M-UC0 K4H1G0438M-UC2 K4H1G0438M-ULB30 K4H1G0438M-UCA20 K4H1G0838M-ULB00 K4H1G0438M-ULA20
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| OCR Text |
...e Pinout
Organization 256Mx4 128mx8
Row Address A0~A13 A0~A13
Column Address A0-A9, A11, A12 A0-A9, A11
DM is internally loaded to match DQ and DQS identically. Row & Column address configuration
Revision 1.1 October, 2004
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| Description |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
0603 18 OHM 1/16W
RESISTOR, 1K, 1%, SMT 0603
1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
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| File Size |
208.47K /
23 Page |
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it Online |
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ProMOS Technologies
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| Part No. |
V58C2512164SB
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| OCR Text |
... g0140 64mx16, 8k : g0116 speed 128mx8, 8k : g0180 8 : 125mhz @cl3-3-3 5d : 200mhz @cl2-3-3 75 : 133mhz @cl2.5-3-3 4 : 250mhz @cl4-4-4 cmos 7 : 133mhz @cl2-2-2 37 : 266mhz @cl4-4-4 6 : 166mhz @cl2.5-3-3 36 : 275mhz @cl4-4-4 voltage banks 5... |
| Description |
High Performance 512M-Bit DDR SDRAM
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| File Size |
1,010.47K /
61 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4T1G084QC
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| OCR Text |
...l)d5 k4t1g044qc-zc(l)cc 60 fbga 128mx8 k4t1g084qc-zc(l)f7 k4t1g084qc-zc(l)e6 k4t 1g084qc-zc(l)d5 k4t1g084qc-zc(l)cc 60 fbga ? jedec standard 1.8v 0.1v power supply ? vddq = 1.8v 0.1v ? 200 mhz f ck for 400mb/sec/pin, 267mhz f ck for 533... |
| Description |
1Gb C-die DDR2 SDRAM Specification
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| File Size |
482.65K /
26 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4T1G084QD K4T1G164QD
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| OCR Text |
...33 4-4-4 ddr2-400 3-3-3 package 128mx8 k4t1g084qd-zc(l)e7 k4t1g084qd-zc(l)f7 k4t1g084qd- zc(l)e6 k4t1g084qd-zc(l)d5 k4t1g084qd-zc(l)cc 60 fbga 64mx16 k4t1g164qd-zc(l)e7 k4t1g164qd- zc(l)f7 k4t1g164qd-zc(l)e6 k4t1g164qd -zc(l)d5 k4t1g164qd-z... |
| Description |
1Gb D-die DDR2 SDRAM Specification
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| File Size |
582.69K /
27 Page |
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it Online |
Download Datasheet |
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Cypress Semiconductor, Corp.
Samsung semiconductor
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| Part No. |
K4H1G0438A-UC/LA2 K4H1G0838A-UC/LA2 K4H1G0438AUC/LB3 K4H1G0838A-UC/LB3 K4H1G0438A-UC/LCC K4H1G0438A-UC/LB0 K4H1G0838A-UC/LCC K4H1G0438A-UCB00 K4H1G0838A-UCA20
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| OCR Text |
...e Pinout
Organization 256Mx4 128mx8
Row Address A0~A13 A0~A13
Column Address A0-A9, A11, A12 A0-A9, A11
DM is internally loaded to match DQ and DQS identically. Row & Column address configuration
Rev. 1.1 January 2007
K4H... |
| Description |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
1Gb A-die SDRAM Specification
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| File Size |
360.68K /
24 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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