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  1m.word Datasheet PDF File

For 1m.word Found Datasheets File :: 2114    Search Time::2.906ms    
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    CY7C2565XV18-600BZC CY7C2565XV18-600BZXC CY7C2565XV18-633BZC CY7C2563XV18-633BZC CY7C2563XV18-600BZXC CY7C2563XV18-600BZ

Cypress Semiconductor
Part No. CY7C2565XV18-600BZC CY7C2565XV18-600BZXC CY7C2565XV18-633BZC CY7C2563XV18-633BZC CY7C2563XV18-600BZXC CY7C2563XV18-600BZC CY7C2563XV18-633BZXC
OCR Text ...ic block diagram ? cy7c2563xv18 1m x 18 array clk a (19:0) gen. k k control logic address register d [17:0] read add. decode read data reg. ...word of data is driven onto the q [17:0] using k as the output timing reference. on the subsequent...
Description 72-Mbit QDR? II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

File Size 590.53K  /  29 Page

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    CYU01M16SCCU-70BVXI CYU01M16SCCU

Cypress Semiconductor, Corp.
Part No. CYU01M16SCCU-70BVXI CYU01M16SCCU
OCR Text 1M x 16) Pseudo Static RAM Features * Wide voltage range: 2.2V-3.6V * Access Time: 70 ns * Ultra-low active power -- Typical active curren...word Page Mode * Automatic power-down when deselected * CMOS for optimum speed/power * Offered in a ...
Description 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
16-Mbit (1M x 16) Pseudo Static RAM

File Size 384.39K  /  12 Page

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    CYU01M16SFCU-70BVXI CYU01M16SFCU

Cypress Semiconductor, Corp.
Part No. CYU01M16SFCU-70BVXI CYU01M16SFCU
OCR Text 1M x 16) Pseudo Static RAM Features * Wide voltage range: 1.7V-1.95V * Access Time: 70 ns * Ultra-low active power -- Typical active curre...word Page Mode * Automatic power-down when deselected * CMOS for optimum speed/power * Offered in a ...
Description 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
16-Mbit (1M x 16) Pseudo Static RAM

File Size 384.68K  /  12 Page

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    CYU01M16ZFCU-70BVXI CYU01M16ZFC

Cypress Semiconductor, Corp.
Part No. CYU01M16ZFCU-70BVXI CYU01M16ZFC
OCR Text 1M x 16) Pseudo Static RAM Features * Wide voltage range: 1.7V-1.95V * Access Time: 70 ns * Ultra-low active power -- Typical active curre...word Page Mode * Automatic power-down when deselected * CMOS for optimum speed/power * Deep Sleep Mo...
Description 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, FBGA-48
16-Mbit (1M x 16) Pseudo Static RAM

File Size 419.63K  /  14 Page

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    EMP116MGAW-70E

Emerging Memory & Logic Solutions Inc
Part No. EMP116MGAW-70E
OCR Text 1M x 16 bit Pseudo SRAM ( EMP116MGAW Series ) Specification Revision History Revision No. 0.0 History Initial Draft Draft Date ...Word Read Lower Byte Write Upper Byte Write Word Write Power Stand by Deep Power Down Stand by Activ...
Description 21Mx16 Pseudo Static RAM

File Size 465.38K  /  12 Page

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    HY29DS162 HY29DS162BF-12I HY29DS162BF-13 HY29DS162BT-12 HY29DS162BT-13 HY29DS162TF-13 HY29DS162TF-13I HY29DS162TT-13 HY2

HYNIX[Hynix Semiconductor]
Part No. HY29DS162 HY29DS162BF-12I HY29DS162BF-13 HY29DS162BT-12 HY29DS162BT-13 HY29DS162TF-13 HY29DS162TF-13I HY29DS162TT-13 HY29DS163 HY29DS163BF-12 HY29DS163BF-12I HY29DS163BF-13I HY29DS163BT-12I HY29DS163TF-12I HY29DS163TF-13I HY29DS162TF-12 HY29DS162TF-12I HY29DS163TT-13I HY29DS162BF-12 HY29DS162BF-13I HY29DS162BT-12I HY29DS162BT-13I HY29DS162TT-12 HY29DS162TT-12I HY29DS162TT-13I HY29DS163BF-13 HY29DS163BT-12 HY29DS163BT-13 HY29DS163BT-13I HY29DS163TF-12 HY29DS163TF-13 HY29DS163TT-12 HY29DS163TT-12I HY29DS163TT-13
OCR Text 1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n ...Word program time utilizing Acceleration function: 13 s typical Space Efficient Packaging - 48-pin T...
Description 16 MEGABIT (2M X 8/1M X 16) SUPER-LOW VOLTAGE, DUAL BANK, SIMULTANEOUS READ/WRITE, FLASH MEMORY

File Size 543.43K  /  48 Page

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    CY7C1563XV18-633BZXC CY7C1565XV18-633BZXC CY7C1563XV18-600BZXC CY7C1565XV18-600BZXC

Cypress Semiconductor
Part No. CY7C1563XV18-633BZXC CY7C1565XV18-633BZXC CY7C1563XV18-600BZXC CY7C1565XV18-600BZXC
OCR Text ...ic block diagram ? cy7c1565xv18 1m x 18 array clk a (19:0) gen. k k control logic address register d [17:0] read add. decode read data reg. ...word of data is driven onto the q [17:0] using k as the output timing reference. on the subsequent...
Description 72-Mbit QDR? II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)

File Size 1,064.11K  /  29 Page

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    HN58W241000I05

Renesas Electronics Corporation
Part No. HN58W241000I05
OCR Text 1M EEPROM (128-kword x 8-bit) REJ03C0138-0300 Rev.3.00 Jul.12.2005 Description HN58W241000I is the two-wire serial interface EEPROM (El...word. This happens during ninth clock cycle. The transmitter keeps bus open to receive acknowledgmen...
Description Two-wire serial interface 1M EEPROM (128-kword 】 8-bit)

File Size 120.15K  /  20 Page

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    A42L0616S-45 A42L0616S-50

AMIC Technology
Part No. A42L0616S-45 A42L0616S-50
OCR Text 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 0.1 0.2 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Histor...word by 16-bit configuration. This product can execute Byte Write and Byte Read operation via two CA...
Description 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE

File Size 274.26K  /  26 Page

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    M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8 M5M4V16169DTP-15 M5M4V16169DTP M5M4V16169DRT-10 M5M4V16169DRT-15 M5M4V1

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8 M5M4V16169DTP-15 M5M4V16169DTP M5M4V16169DRT-10 M5M4V16169DRT-15 M5M4V16169DRT-7 M5M4V16169DRT-8
OCR Text 1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice. PINCONFIGURATION (TOP VIEW) Vcc DQCl DQCu CC1# CC0#...
Description 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

File Size 726.41K  /  64 Page

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For 1m.word Found Datasheets File :: 2114    Search Time::2.906ms    
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