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  2.50a Datasheet PDF File

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    FDB887008

Fairchild Semiconductor
Part No. FDB887008
OCR Text ... to Source Leakage Current ID = 250A, VGS = 0V VDS = 24V VGS = 0V VGS = 20V TC = 150oC 30 1 250 100 V A nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 35A, VGS = 10V rDS(ON) Drain to Source On R...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench㈢ MOSFET

File Size 411.50K  /  11 Page

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    FDB889608

Fairchild Semiconductor
Part No. FDB889608
OCR Text ... to Source Leakage Current ID = 250A, VGS = 0V VDS = 24V VGS = 0V VGS = 20V TC = 150oC 30 1 250 100 V A nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 35A, VGS = 10V rDS(ON) Drain to Source On R...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench㈢ MOSFET

File Size 374.49K  /  11 Page

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    ZXMD63C03X05

Zetex Semiconductors
Part No. ZXMD63C03X05
OCR Text ...A nA V 0.135 0.200 1.9 S I D =250A, V GS =0V V DS =30V, V GS =0V V GS = 20V, V DS =0V SYMBOL MIN. TYP. MAX. UNIT CONDITIONS I =250A, V DS = V GS D V GS =10V, I D =1.7A V GS =4.5V, I D =0.85A V DS =10V,I D =0.85A Static Drain-Source ...
Description 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 632.78K  /  11 Page

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    FDD424307 FDD4243

Fairchild Semiconductor
Part No. FDD424307 FDD4243
OCR Text ...to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -32V, VGS = 0V TJ = 125C VGS = 20V, VGS = 0V -40 -32 -1 -100 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold V...
Description 40V P-Channel PowerTrench? MOSFET
40V P-Channel PowerTrench庐 MOSFET
40V P-Channel PowerTrench㈢ MOSFET

File Size 339.17K  /  6 Page

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    FDD887008 FDD8870 FDU8870

Fairchild Semiconductor
Part No. FDD887008 FDD8870 FDU8870
OCR Text ... to Source Leakage Current ID = 250A, VGS = 0V VDS = 24V VGS = 0V VGS = 20V TC = 150oC 30 1 250 100 V A nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 35A, VGS = 10V rDS(ON) Drain to Source On R...
Description N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench庐 MOSFET
N-Channel PowerTrench? MOSFET

File Size 352.26K  /  11 Page

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    FDD8874 FDD887408 FDU8874

Fairchild Semiconductor
Part No. FDD8874 FDD887408 FDU8874
OCR Text ... to Source Leakage Current ID = 250A, VGS = 0V VDS = 24V VGS = 0V VGS = 20V TC = 150oC 30 1 250 100 V A nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 35A, VGS = 10V rDS(ON) Drain to Source On R...
Description N-Channel PowerTrench MOSFET 30V, 116A, 5.1m ohm

File Size 425.50K  /  11 Page

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    FDD8876 FDD887608 FDU8876

Fairchild Semiconductor
Part No. FDD8876 FDD887608 FDU8876
OCR Text ... to Source Leakage Current ID = 250A, VGS = 0V VDS = 24V VGS = 0V VGS = 20V TC = 150oC 30 1 250 100 V A nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 35A, VGS = 10V rDS(ON) Drain to Source On R...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench㈢ MOSFET

File Size 398.34K  /  11 Page

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    FDD888008

Fairchild Semiconductor
Part No. FDD888008
OCR Text ... to Source Leakage Current ID = 250A, VGS = 0V VDS = 24V VGS = 0V VGS = 20V TC = 150oC 30 1 250 100 V A nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 35A, VGS = 10V rDS(ON) Drain to Source On R...
Description N-Channel PowerTrench? MOSFET 30V, 58A, 9mΩ
N-Channel PowerTrench㈢ MOSFET 30V, 58A, 9mヘ

File Size 399.81K  /  11 Page

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    FDD8882 FDU8882 FDD888208

Fairchild Semiconductor
Part No. FDD8882 FDU8882 FDD888208
OCR Text ... to Source Leakage Current ID = 250A, VGS = 0V VDS = 24V VGS = 0V VGS = 20V TC = 150oC 30 1 250 100 V A nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 35A, VGS = 10V rDS(ON) Drain to Source On R...
Description N-Channel PowerTrench? MOSFET
N-Channel PowerTrench㈢ MOSFET

File Size 357.90K  /  12 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...G LS S TEST CONDITIONS ID = -250A, VGS = 0V, (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TC = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = 20V ID = -10A, VGS = -10V (Figures 8, 9) V...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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