20ma 300v pdf Datasheet P9 Full Text Search --- IC-ON-LINE


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20ma 300v Datasheet PDF File

For 20ma 300v Found Datasheets File :: 555 Search Time::4.782ms
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				Fairchild Semiconductor
Part No.	SGP40N60UF SGP40N60 SGP40N60UFTU
OCR Text	...Emitter Saturation Voltage IC = 20ma, VCE = VGE IC = 20A, VGE = 15V IC = 40A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V Dynamic Characte...300v Load Current : peak of square wave Collector - Emitter Voltage, VCE [V] 3 40A Load ...
Description	Discrete, High Performance IGBT Ultra-Fast IGBT
File Size	545.42K / 7 Page	View it Online	Download Datasheet

				Powerex Power Semiconductors
Part No.	CM200DY-24NF
OCR Text	...hold voltage v ge(th) i c = 20ma, v ce = 10v 5 6 7 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v...300v, i c = 200a, v ge = 15v C 1240 C nc emitter-collector voltage** v ec i e = 200a, v ge...
Description	Trench Gate Design Dual IGBTMOD
File Size	134.11K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM20TD-HB QM20
OCR Text	... IB=200mA IB=80mA IB=40mA 20 IB=20ma DC CURRENT GAIN hFE 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0 2 VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT...300v IB1=120ma IB2=-400mA 3 ts 2 SWITCHING TIME 1 IC=15A IC=20A 0 10 -2 2...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	75.72K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	QM50DY-HB
OCR Text	...=100ma i b =50ma i b =10ma i b =20ma 4 10 7 5 4 3 2 3 10 7 5 4 3 2 2 10 0 10 23457 1 10 23457 2 10 v ce =2.5v t j =25? t j ...300v i b1 =100ma t s performance curves common emitter output characteristics (typical) common emitt...
Description	MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	81.24K / 5 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2SD1115
OCR Text	...turation Voltage IC= 2A; IB= 20ma B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 20ma B 2.0 V ICEO Collector Cutoff Current VCE= 300v; RBE= hFE DC Current Gain Switching times to...
Description	Silicon NPN Darlington Power Transistor
File Size	211.35K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM200TU-12F
OCR Text	...tions VCE = VCES, VGE = 0V IC = 20ma, VCE = 10V VGE = VCES, VCE = 0V Tj = 25C IC = 200A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 300v, IC = 200A, VGE = 15V VCC = 300v, IC = 200A VGE1 = VGE2 = 15V RG = 3.1, Inductive load switching oper...
Description	HIGH POWER SWITCHING USE 240 x 128 pixel format, CFL Backlight with power harness
File Size	78.25K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	CM200TU-12F
OCR Text	... = 0V VGE = VCES, VCE = 0V IC = 20ma, VCE = 10V IC = 200A, VGE = 15V, Tj = 25C IC = 200A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 300v, IC = 200A, VGE = 15V IE = 200A, VGE = 0V Min. - - 5 - - - - Typ. - - 6 ...
Description	240 x 128 pixel format, CFL Backlight with power harness Trench Gate Design Six IGBTMOD⑩ 200 Amperes/600 Volts Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts Trench Gate Design Six IGBTMOD?/a> 200 Amperes/600 Volts
File Size	126.68K / 4 Page	View it Online	Download Datasheet

				Seme LAB
Part No.	2N3439DCSM 2N3440DCSM
OCR Text	...B = 6V IC = 50mA IC = 50mA IC = 20ma hFE* DC Current Gain VCE = 10V IC = 2mA VCE = 10V * Pulse test tp = 300s , 2% (Tcase = 25C unless otherwise stated) Test Conditions 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 IB = ...
Description	HIGH VOLTAGE, MEDIUM POWER, NPN
File Size	20.61K / 2 Page	View it Online	Download Datasheet

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