256mbit 4 banks x 4m x 16 1 8v pdf Datasheet P9 Description --- IC-ON-LINE


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256mbit 4 banks x 4m x 16 1 8v Datasheet PDF File

For 256mbit 4 banks x 4m x 16 1 8v Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				Mosel Vitelic, Corp.
Part No.	V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54C3256164VAT V54C3256404VAB V54C3256404VBT
Description	256mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M x 16, 32M x 8, 64M x 4 56Mbit SDRAM.3伏，第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
File Size	756.86K / 52 Page	View it Online	Download Datasheet

				Winbond Electronics WINBOND[Winbond]
Part No.	W986432AH W986432AHA1
Description	512K x 4 banks x 32 BITS SDRAM 512K x 4 banks x 32 BITS SDRAM From old datasheet system
File Size	1,343.55K / 44 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	S25FL128L S25FL256L
Description	256mbit (32Mbyte)/128Mbit (16Mbyte),3.0 V FL-L Flash Memory
File Size	1,239.12K / 158 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K4S510832M-TC_TL75 K4S510832M-TC1H K4S510832M-TC1L K4S510832M-TL75 K4S510832M-TC75 K4S510832M-TL1H K4S510832M-TL1L K4S510832M-TC/TL1L K4S510832M-TC/TL1H K4S510832M-TC/TL75
Description	16M x 8Bit x 4 banks Synchronous DRAM Data Sheet 16M x 8bit x 4 banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
File Size	110.61K / 11 Page	View it Online	Download Datasheet

				Infineon
Part No.	HYB25D256160CC-6 HYB25D256400CC-5 HYB25D256400CC-6 HYB25D256800CC-6 HYB25D256800CF-6 HYB25D256160CE-5 HYB25D256800CE-5 HYB25D256160CE-6 HYB25D256800CEL-6 HYB25D256800CE-6
Description	DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3); available 2Q04 DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR400 (3-3-3); available 2Q04 DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3); available 2Q04 DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3); available 2Q04 DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3) Available 2Q04 DDR SDRAM Components - 256Mb (16Mx16) DDR400 (3-3-3) DDR SDRAM Components - 256mbit (32Mx8) DDR400 (3-3-3) DDR SDRAM Components - 256mbit (16Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 256mbit (32Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 256mbit (32Mx8) DDR333 (2.5-3-3)
File Size	2,617.00K / 85 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIx[Hynix Semiconductor]
Part No.	HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGLTP-6 HY57V64820HGLTP-8 HY57V64820HGLTP-H HY57V64820HGLTP-K HY57V64820HGLTP-P HY57V64820HGLTP-S HY57V64820HGTP-5 HY57V64820HGTP HY57V64820HGTP-55 HY57V64820HGTP-6 HY57V64820HGTP-7 HY57V64820HGTP-8 HY57V64820HGTP-H HY57V64820HGTP-K HY57V64820HGTP-P HY57V64820HGTP-S HY57V64820HGLTP-7
Description	4 banks x 2M x 8Bit Synchronous DRAM 8M x 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 banks x 2M x 8Bit Synchronous DRAM 8M x 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% x7R SMD-0805 TR-13 PLATED-NI/SN 8M x 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
File Size	74.79K / 11 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIx[Hynix Semiconductor]
Part No.	HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
Description	SDRAM - 64Mb 4 banks x 1M x 16Bit Synchronous DRAM 4M x 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 banks x 1M x 16Bit Synchronous DRAM 4M x 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 banks x 1M x 16Bit Synchronous DRAM 4M x 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% x7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:x7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
File Size	142.41K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70
Description	2M x 32 SDRAM 512K x 32bit x 4 banks Synchronous DRAM LVTTL3.3V -2M x 32 SDRAM 512K x 32bit x 4 banks Synchronous DRAM LVTTL3.3V CONNECTOR ACCESSORY 2M x 32 SDRAM 512K x 32bit x 4 banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
File Size	98.11K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic Electronic Theatre Controls, Inc.
Part No.	KM48S8030CT-FL KM48S8030CT-GFH KM48S8030CT-GF7
Description	2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 143MHz 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz 8M x 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 x 0.875 INCH, 0.80 MM PITCH, TSOP2-54
File Size	125.72K / 11 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIx[Hynix Semiconductor]
Part No.	HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 HY57V641620HGT-55 HY57V641620HGT-H HY57V641620HG HY57V641620HGT-P HY57V641620HGLT-P HY57V641620HGT-S HY57V641620HGT-8 HY57V641620HGT-K
Description	4 banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM 4 banks x 1M x 16Bit Synchronous DRAM 4M x 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
File Size	84.91K / 12 Page	View it Online	Download Datasheet

For 256mbit 4 banks x 4m x 16 1 8v Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |