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NJRC[New Japan Radio]
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| Part No. |
NJM2701M NJM2701 NJM2701D
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| OCR Text |
... BW=10 to 80KHz
1
1
Ta=25deg Ta=-40deg 0.01
THD+N [%]
THD+N [%]
0.1
Ta=85deg
0.1 Ta=85deg Ta=25deg 0.01 Ta=-40deg
0.001
0.001
0.0001 -50
-40
-30
-20
-10
0
10
20
30
0.0001 -50
-4... |
| Description |
3D SURROUND AUDIO PROCESSOR
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| File Size |
200.28K /
11 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
MT4S34U
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| OCR Text |
...
MICROWAVE CHARACTERISTICS(Ta=25deg.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. 15 TYP. 19 14 1.2 MAX. 17 TBD UNIT GHz dB dB
Transition Frequency Insertion Gain Noise Figure
fT
S21e
NF
2
VCE=2V VCE=2V VCE=2V
IC=20mA IC=20m... |
| Description |
SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APLICATIONS.
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| File Size |
112.14K /
4 Page |
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it Online |
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Soshin
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| Part No. |
SV562CD0006
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| OCR Text |
... - m h z / v load=50ohm, +25deg.c+/-5deg.c -3.0 0.0 +3.0 dbm output level load=50ohm, 0deg.c up to +80deg.c -4.0 - +4.0 dbm phase noise offset=10khz, 0deg.c up to +80deg.c 100 105 - dbc/ hz pushing figure vb=3.0v... |
| Description |
VOC
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| File Size |
47.77K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS48V2527_04 MGFS48V2527 MGFS48V252704
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| OCR Text |
...ture Storage temperature
(Ta=25deg.C) Ratings -20 -10 107.1 175 -65 / +175 Unit V V W deg.C deg.C
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product... |
| Description |
2.5 - 2.7GHz BAND 60W GaAs FET
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| File Size |
441.01K /
6 Page |
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it Online |
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NEC, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
MGFS48B2122
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| OCR Text |
...;,0805$7,1*6
WPKVOO
(Ta=25deg.C) Unit V V W deg.C deg.C
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there i... |
| Description |
2.11 - 2.17 GHz BAND 60W GaAs FET 21日至二月17号GHz频段60瓦砷化镓场效应管
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| File Size |
223.84K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS45V2527A
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| OCR Text |
... 5174%'
(.#0)' &4#+0
)(
(Ta=25deg.C) Ratings -15 -15 22 -61 76 88 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IG... |
| Description |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
248.54K /
3 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS45V2325A_04 MGFS45V2325A MGFS45V2325A04
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| OCR Text |
... 5174%'
(.#0)' &4#+0
)(
(Ta=25deg.C) Ratings -15 -15 22 -61 76 100 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current I... |
| Description |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
235.26K /
2 Page |
View
it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS45V2123A_04 MGFS45V2123A MGFS45V2123A04
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| OCR Text |
... 5174%'
(.#0)' &4#+0
)(
(Ta=25deg.C) Ratings -15 -15 22 -61 76 100 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current I... |
| Description |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
234.61K /
2 Page |
View
it Online |
Download Datasheet |
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