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				Intel
Part No.	28F002BL-B 28F002BL-T 28F200BL-B E28F200BL-T150
OCR Text	...le memories organized as either 262 144 bytes or 131 072 words of information They are offered in 44-Lead plastic SOP and 56-Lead TSOP packages The x8 x16 pinout conforms to the industry standard ROM EPROM pinout The Intel 28F002BL-T B are ...
Description	2-MBIT (128K x 16, 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16/ 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
File Size	499.51K / 42 Page	View it Online	Download Datasheet

				Integrated Device Technology, Inc.
Part No.	IDT72T20128L10BBI IDT72T2098L10BBI IDT72T20128L6BBI IDT72T20128L7BB
OCR Text	... x 20/131,072 x 10 131,072 x 20/262,144 x 10, 262,144 x 20/524,288 x 10 idt72t2098, idt72t20108 idt72t20118, idt72t20128 input register output register ram array 32,768 x 20 or 65,536 x 10 65,536 x 20 or 131,072 x 10 131,072 x 20 or 262,1...
Description	2.5 VOLT HIGH-SPEED TeraSyncDDR/SDR FIFO 20-BIT/10-BIT CONFIGURATION 2.5伏高速TeraSync⑩复特别提款权先进先0-BIT/10-BIT配置
File Size	496.21K / 51 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616LV4020 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI
OCR Text	...ndom Access Memory organized as 262,144 words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
File Size	215.30K / 12 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI
OCR Text	...ndom Access Memory organized as 262,144words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2...144 x 16-bit words in the RAM. This address input incorporates with the above 17 address input selec...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
File Size	222.10K / 11 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616LV4023 BS616LV4023BC BS616LV4023BI BS616LV4023DC BS616LV4023DI
OCR Text	...ndom Access Memory organized as 262,144words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2...144 x 16-bit words in the RAM. This address input incorporates with the above 17 address input selec...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
File Size	217.16K / 11 Page	View it Online	Download Datasheet

				BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
Part No.	BS616LV4025 BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI
OCR Text	...ndom Access Memory organized as 262,144 words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable 非常低功电压CMOS SRAM56K × 1612K × 8位开 LM5009 150 mA, 100V Step-Down Switching Regulator; Package: MINI SOIC; No of Pins: 8
File Size	187.58K / 11 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI
OCR Text	...ndom Access Memory organized as 262,144 words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed...
Description	Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
File Size	209.23K / 11 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology]
Part No.	IDT72V295 IDT72V2105 IDT72V2105L10PF IDT72V2105L15PFI IDT72V2105L20PF IDT72V295L20PF IDT72V295L20PFI IDT72V295L15PFI IDT72V2105L10PFI IDT72V2105L15PF IDT72V2105L20PFI IDT72V295L10PF IDT72V295L10PFI IDT72V295L15PF IDT72V295L20PF8 IDT72V295L15PFI8 IDT72V295L15PF8 IDT72V295L10PF8
OCR Text	262,144 x 18 .EATURES: * * * * * * * IDT72V295 IDT72V2105 * * * * * * * * * * * Choose among the following memory organizations: IDT72V295 131,072 x 18 IDT72V2105 262,144 x 18 Pin-compatible with the IDT72V255/72V265 and the ID...
Description	128K x 18 SuperSync FIFO, 3.3V 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 131,072 x 18 262,144 x 18 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO?
File Size	234.25K / 26 Page	View it Online	Download Datasheet

				Rochester Electronics, LLC
Part No.	AM27C4096-15JC
OCR Text	...ro devices am27c4096 4 megabit (262,144 x 16-bit) cmos eprom final distinctive characteristics n fast access time 90 ns n low power consumption 100 m a maximum cmos standby current n jedec-approved pinout plug in upgrade of 1 mbit and 2...
Description	IC-SM-4MB CMOS PROM 集成电路MB的的CMOS胎膜早破
File Size	86.18K / 11 Page	View it Online	Download Datasheet

				Mitsubishi
Part No.	M6MGB_T160S2BVP M6MGB E99003_A
OCR Text	...2-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) MITSUBISHI LSIs DESCRIPTION FEATURES The MITSUBISHI M6MGB/T160S2BVP is a Stacked Multi * Access time Chip Package (S-MCP) that contents ...
Description	16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT (1,048,576 -WORD BY 16-BIT 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY From old datasheet system
File Size	255.86K / 30 Page	View it Online	Download Datasheet

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