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3.1872 Datasheet PDF File

For 3.1872 Found Datasheets File :: 104 Search Time::2.562ms
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				Fairchild Semiconductor
Part No.	FDA24N50F
OCR Text	... (note 3) 15 v/ns p d power dissipation (t c = 25 o c) 270 w - derate above 25 o c2.2w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/...
Description	N-Channel MOSFET 500V, 24A, 0.2Ω
File Size	626.51K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	MH4V6445BXJJ-5S MH4V6445BXJJ-6
OCR Text	...ating power dissipation single 3.3v?0.3v supply low stand-by power dissipation 7.2mw- - - - - - - - - lvcmos input leve...1872 mw(max.) address mh4v6445bxjj part no. row add. col add. refresh refresh cycle normal a0~a11 a0...
Description	HYPER PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM 超页模式268435456位（4194304字，64位）动态随机存储器
File Size	155.86K / 26 Page	View it Online	Download Datasheet

				EPCOS
Part No.	B39182-B1659-B510
OCR Text	...eration features n package size 3.0 x 3.0 x 1.1 mm 3 n maximum height of 1.225 mm n package code qcc8f n rohs compatible n approximate weigh...1872.54 ... 2000.00 mhz 36.0 46.0 db 2000.00 ... 6000.00 mhz 25.0 40.0 db 4 january 11, 2011 b16...
Description	SAW RF low loss filter Satellite CSS
File Size	52.55K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF6G20-40
OCR Text	...g20-40 power ldmos transistor 1.3 applications n rf power ampli?ers for w-cdma base stations and multi carrier applications in the 1800 mhz ...1872.5 mhz; f 4 = 1877.5 mhz; rf performance at v ds = 28 v; i dq = 360 ma; t case = 25 c; unle...
Description	Power LDMOS transistor BLF6G20-40<SOT608A (CDFM2)\|<<http://www.nxp.com/packages/SOT608A.html<1<Always Pb-free,;
File Size	69.18K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF6G20-45 BLF6G20S-45
OCR Text	...20s-45 power ldmos transistor 1.3 applications n rf power ampli?ers for w-cdma base stations and multi carrier applications in the 1800 mhz ...1872.5 mhz; f 4 = 1877.5 mhz; rf performance at v ds = 28 v; i dq = 360 ma; t case = 25 c; unle...
Description	Power LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF6G20-45<SOT608A (CDFM2)\|<<http://www.nxp.com/packages/SOT608A.html<1<Always Pb-free,;BLF6G20-45<SOT608A (CDFM2)\|<<http://www.nxp.com/packages/SOT608A.html<1<Always Pb-free,;
File Size	74.41K / 12 Page	View it Online	Download Datasheet

				ROHM
Part No.	KF3008-GR16A
OCR Text	...nks to the cover when printing. 3) good printing easily attained thanks to big platen (max. 25mm) compliance. 4) thick film type with glaz...1872 1873~2592 720 1296 1296 576 576 720 dot no. di no. dots / stb dots / di 1 2 dot no. fig. 1 10 7...
Description	Thermal Printheads > For POS, LABEL > KF200*-GR Series
File Size	71.52K / 4 Page	View it Online	Download Datasheet

				Seme LAB
Part No.	SML1310IGF
OCR Text	... ? gate pin 2 ? drain pin 3 ? source v ds 100v i d(max) 18a r ds(on) .044 ? ? semelab plc. telephone +44(0)1455 556565. fax +44(0)1...1872 463 234 19 85 65 54 18 72 1.3 270 1.8 bv dss v gs(th) i gss i gss i dss r ds(on) g fs c iss c o...
Description	N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS
File Size	38.67K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HI7190 HI7190EVAL HI7190IB HI7190IP FN3612
OCR Text	...Ld PDIP 20 Ld SOIC PKG. NO. E20.3 M20.3 Pinout HI7190 (PDIP, SOIC) TOP VIEW SCLK SDO SDIO CS DRDY DGND AVSS 1 2 3 4 5 6 7 20 MODE 19 SY...1872 HI7190 Absolute Maximum Ratings Supply Voltage AVDD to AGND . . . . . . . . . . . . . . . ...
Description	From old datasheet system null24-Bit, High Precision, Sigma Delta A/D Converter
File Size	186.27K / 24 Page	View it Online	Download Datasheet

				Avago Technologies, Ltd. Agilent Technologies, Inc. Agilent(Hewlett-Packard)
Part No.	ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2
OCR Text	3] package data sheet description agilent technologiess atf- 501p8 is a single-voltage high linearity, low noise e-phemt housed in an 8-lea...1872 ? vgs = vgs1 C vgs2 vgs1 = 0.55v, vgs2 = 0.5v igss gate leakage current vds = 0v, vgs = -4.5...
Description	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package 安捷伦亚欧信托基 501P8高线性增强模式伪HEMT器件x2平方毫米的LPCC封装 S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8 Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
File Size	184.86K / 22 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF7G20L-200 BLF7G20LS-200 BLF7G20L-200-15
OCR Text	...s (rohs) directive 2002/95/ec 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multi-carrier applications in the 1805 m...1872.5 mhz; f 4 = 1877.5 mhz; rf performance at v ds =28v; i dq = 1620 ma; t case =25 ? c; unless o...
Description	Power LDMOS transistor
File Size	125.78K / 13 Page	View it Online	Download Datasheet

For 3.1872 Found Datasheets File :: 104 Search Time::2.562ms
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