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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
AM1011-500
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| OCR Text |
...INPUT/OUTPUT MATCHING ZED UNDER 32S.,2% DUTY CYCLE PULSE CONDITIONS
.400 x .600 2L FL (M198) hermetically sealed ORDER CODE AM1011-500 BRANDING 1011-500
PIN CONNECTION The AM1011-500 device is a high power Class C transistor specifica... |
| Description |
RF & Microwave Transistors Avionics Applications(用于航空电子的RF和微波晶体管) 射频 RF & Microwave Transistors Avionics Applications(用于航空电子的RF和微波晶体管)
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| File Size |
53.19K /
4 Page |
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Infineon Technologies A...
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| Part No. |
PTVA101K02EVV1R250
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| OCR Text |
...der modeCs pulse condition, (32s on / 18s off) x 80, ltdf = 6.4%. rf characteristics pulsed rf performance (tested in infneon test fxture) v dd = 50 v, i dq = 0.15 a, p out = 900 w, ? = 1030 mhz, 128 s pulse width, 10% duty cyc... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
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| File Size |
444.18K /
9 Page |
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Samsung Electronic
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| Part No. |
K4R271669B
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| OCR Text |
... rdram(b-die) 256k x 16 bit x 32s banks version 1.11 october 2000 direct rdram tm short channel
page 0 version 1.11 oct. 2000 k4r271669b for short channel direct rdram ? preliminary change history version 1.11 ( october 2000 ) -... |
| Description |
Direct RDRAMData Sheet
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| File Size |
314.04K /
20 Page |
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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| Part No. |
K4R881869D K4R571669D
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| OCR Text |
32s banks Direct RDRAMTM
Version 1.4 July 2002
Page -1
Version 1.4 July 2002
K4R571669D/K4R881869D
Change History
Direct RDRAMTM
Version 1.4( July 2002)
- First Copy ( Version 1.4 is named to unify the version of compone... |
| Description |
256/288Mbit RDRAM(D-die)
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| File Size |
309.27K /
20 Page |
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it Online |
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Price and Availability
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