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ST Microelectronics
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| Part No. |
STB3NC90Z-1 STP3NC90ZFP
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| OCR Text |
...tage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 1.75 a 3.2 3.5 w i d(on) on state drain current v ds > i d(on) x r ds(on)max, v gs =10v 3.5 a symbol parameter test conditions min. typ... |
| Description |
N-CHANNEL 900V 3.2 OHM 3.5A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
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| File Size |
339.81K /
11 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB6NC80Z
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| OCR Text |
... voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d =3a 1.5 1.8 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =3a 7s c iss ... |
| Description |
N-CHANNEL Power MOSFET
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| File Size |
442.10K /
13 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD5NB30
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| OCR Text |
...oltage v ds =v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d =2.5 a 0.75 0.9 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 5a dynamic symbol parameter test conditions min. typ. ma... |
| Description |
N - CHANNEL PowerMESHO MOSFET
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| File Size |
112.33K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP5NB40 STP5NB40FP
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| OCR Text |
...voltage v ds =v gs i d =250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d = 2.3 a 1.47 1.8 w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 4.7 a dynamic symbol parameter test conditions min. typ. m... |
| Description |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
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| File Size |
252.81K /
7 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP5NB80
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| OCR Text |
...oltage v ds =v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d = 2.5 a 1.8 2.2 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 5a dynamic symbol parameter test conditions min. typ. ma... |
| Description |
N-CHANNEL PowerMESH MOSFET
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| File Size |
137.52K /
9 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STB10NB20
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| OCR Text |
...oltage v ds =v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d = 5 a 0.30 0.40 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 10 a dynamic symbol parameter test conditions min. typ. ... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
226.02K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB10NB50
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| OCR Text |
...oltage v ds =v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d = 5.3 a 0.55 0.60 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 10.6 a dynamic symbol parameter test conditions min. t... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
226.75K /
8 Page |
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it Online |
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意法半导
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| Part No. |
STD2NB80-1
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| OCR Text |
...v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 1.3 a 4.6 6.5 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 1.9 a dynamic symbol parameter test condit... |
| Description |
N-Channel 800V-4.6Ω-1.9A- IPAK PowerMESHTM MOSFET(N沟道MOSFET)
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| File Size |
48.10K /
5 Page |
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it Online |
Download Datasheet |
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