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BCW66F 2SC60 MAX170 MAX170 MB89530A ATH10K GL8T030 MAX170
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  30.5m Datasheet PDF File

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    ONSEMI
Part No. MBR40250
OCR Text ...35 ns Low Reverse Current, IR = 30 mA Stable Switching Performance Over Temperature SCHOTTKY RECTIFIER 40 AMPERES, 250 VOLTS 4 MARKIN...5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRRE...
Description 40A 250V Schottky Rectifier

File Size 64.70K  /  6 Page

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    NXP Semiconductors N.V.
Part No. BUK624R5-30C
OCR Text ...alanche energy i d =90a; v sup 30 v; r gs =50 ? ; v gs =10v; t j(init) = 25 c; unclamped --271mj dynamic characteristics q gd gate-drain ...5m ? v gs =5v; i d =25a; t j =25c; see figure 11 -4.86m ? v gs =4.5v; i d =25a; t j =25c; see figu...
Description N-channel TrenchMOS intermediate level FET

File Size 177.31K  /  14 Page

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    BLF6G22LS-40BN

NXP Semiconductors
Part No. BLF6G22LS-40BN
OCR Text ...d 14 16 12 18 20 g p (db) 10 20 30 10 40 50 d (%) 0 g p p l (w) 025 20 10 15 5 001aam458 acpr (dbc) ?40 ?20 0 ?60 ?30 ?10 ?50 acpr 5m acpr 10m v ds = 28 v; i dq = 345 ma; f = 2140 mhz. v ds = 28 v; i dq = 345 ma; f = 2140 mhz. fig 3. ...
Description Power LDMOS transistor

File Size 254.31K  /  13 Page

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    MC10110-D

ON Semiconductor
Part No. MC10110-D
OCR Text ...teristics test limits pin under 30 c +25 c +85 c characteristic symbol under test min max min typ max min max unit power supply drain cur...5m, 1982. 5. controlling dimension: inch. 6. the package top may be smaller than the package bottom ...
Description Dual 3-Input/3-Output OR Gate

File Size 117.09K  /  8 Page

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    ESD7361HT1G SZESD7361XV2T1G ESD7361P2T5G

ON Semiconductor
Part No. ESD7361HT1G SZESD7361XV2T1G ESD7361P2T5G
OCR Text ... 4 ns, averaging window; t 1 = 30 ns to t 2 = 60 ns. figure 1. typical iv characteristics figure 2. typical cv characteristics 1.e?03 1.e?...5m, 1982. 2. controlling dimension: millimeters. 3. lead thickness specified per l/f drawing with so...
Description ESD Protection Diodes
   ESD Protection Diodes

File Size 126.56K  /  9 Page

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    DTA143EM

Rohm
Part No. DTA143EM
OCR Text ... values unit v cc ? 50 v v in ? 30 to ? 10 v i o ? 100 ma i c(max.) *1 ? 100 ma dta143em dta143eeb dta143ee p d *2 150 mw dta143eub d...5m ?50m 25c 100c ta= ?40c v cc = ?5v 0 ?3.0 ?10m ?1 ?2m ?5m ?1m ?200 ?500 ?100 ?20 ?50 ?10 ?2 ?5 ?0....
Description PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

File Size 269.54K  /  11 Page

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    NXP Semiconductors N.V.
Part No. BLF7G22LS-100P
OCR Text ...d power; typical values 0 10 20 30 40 50 60 70 d (%) d p l (dbm) 36 52 48 40 44 aaa-001309 g p (db) g p 0 5 10 15 20 25 30 35 (1) (2) (3)...5m (dbc) (1) p l (dbm) 36 48 44 40 4 2 6 8 par (db) 0 aaa-001313 (2) (1) (3) blf7g22l-100p_blf7g2...
Description Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

File Size 671.16K  /  14 Page

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