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  320a Datasheet PDF File

For 320a Found Datasheets File :: 246    Search Time::4.766ms    
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    KD100GB40 DD100GB80 KD100GB80 DD100GB40

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SANREX[SanRex Corporation]
Sanrex, Corp.
Part No. KD100GB40 DD100GB80 KD100GB80 DD100GB40
OCR Text ...alf wave. Tj 150 Foward current 320a Tj 25 Junction to case Inst. measurement Ratings 30 1.25 0.30 Unit mA V /W 75 DD(KD)100GB40/80 76
Description DIODE MODULE 二极管模

File Size 441.60K  /  2 Page

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    IRFR430APBF IRFU430APBF

International Rectifier
Part No. IRFR430APBF IRFU430APBF
OCR Text ...0% VDSS . ISD 5.0A, di/dt 320a/s, VDD V(BR)DSS, 2 www.irf.com IRFR/U430APbF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 10 ...
Description    HEXFET Power MOSFET

File Size 296.03K  /  10 Page

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    TSP075SA TSP090SA TSP065SA TSP140SA TSP160SA TSP190SA TSP320SA TSP058SA TSP275SA

Panjit International Inc
PANJIT[Pan Jit International Inc.]
Part No. TSP075SA TSP090SA TSP065SA TSP140SA TSP160SA TSP190SA TSP320SA TSP058SA TSP275SA
OCR Text ...SA TSP275SA TSP320SA 275A 320a 2nd line: Marking code ORDER & PACKING INFORMATION Device TSPxxxSA 7" Tape & Reel 5 0 0 p cs TSPxxxSA-7 Packing 13" Tape & Reel Min. Order Q'ty 3,000 pcs Order As TSPxxxSA Remark Standard Packing ...
Description SURFACE MOUNT BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

File Size 107.74K  /  7 Page

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    CM800E2C-66H

Mitsubishi Electric Semiconductor
Part No. CM800E2C-66H
OCR Text ... 400 800 1200 1600 2 IC = 320a 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 8 CAPACITANCE Cies, Coes, Cres ...
Description 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

File Size 47.58K  /  4 Page

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    IRKJ250

International Rectifier
Part No. IRKJ250
OCR Text ...pak Power Modules 250A 270A 320a Description This new IRK series of MAGN-A-paks uses high voltage power diodes in two basic configurations. The semiconductors are electrically isolated from the metal base , allowing common heatsinks...
Description (IRKJ250/270/320) Standard Recovery Diodes

File Size 322.70K  /  11 Page

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    IRFIZ44NPBF

International Rectifier
Part No. IRFIZ44NPBF
OCR Text ...Figure 12) ISD 25A, di/dt 320a/s, VDD V(BR)DSS, T J 175C IRFIZ44NPbF 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D VGS 15V 10V 8....
Description HEXFET Power MOSFET

File Size 259.59K  /  8 Page

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    CM800HA-24H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM800HA-24H
OCR Text ... 102 Coes 101 2 IC = 320a VGE = 0V Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 100 10-1 100 101 102 COLLECTOR-EMITTER VOL...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.22K  /  4 Page

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    RM100D2Z-40

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. RM100D2Z-40
OCR Text ...=125C, VRRM applied Tj=25C, IFM=320a, instantaneous meas. Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. -- -- -...
Description HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE

File Size 43.35K  /  3 Page

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    IRFS250A

IR
International Rectifier
Part No. IRFS250A
OCR Text ...oC 3 _ < _ _ O ISD < 32A, di/dt 320a/ s, V DD < BVDSS , Starting T J =25 C _ 4 O Pulse Test : Pulse Width = 250 s, Duty Cycle <2% 5 Essentially Independent of Operating Temperature O N-CHANNEL POWER MOSFET Fig 1. Output Characteristics ...
Description Advanced Power MOSFET

File Size 253.57K  /  7 Page

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