4 banks x 2m x 16bits synchron pdf Datasheet P9 Description --- IC-ON-LINE


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4 banks x 2m x 16bits synchron Datasheet PDF File

For 4 banks x 2m x 16bits synchron Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				WINBOND[Winbond] Winbond Electronics
Part No.	W9864G6 W9864G6DB W9864G6DB-7
Description	1M x 4 banks x 16 BITS SDRAM 1M x 4 banks x 16 BITS SDRAM From old datasheet system BGA SDRAM
File Size	1,380.17K / 48 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58DVM82A1FT00 TC58DVM72A TC58DVM82F1FT00 TC58DAM72F1FT00 TC58DAM82A1FT00 TC58DAM72A1FT00 TC58DAM82F1FT00 TC58DVM72A1FT TC58DVM72F1FT TC58DVMxxx
Description	Flash - NAND 128-MBIT (16M x 8 BITS/8M x 16bits) CMOS NAND E2PROM
File Size	364.95K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 K4S643232H-TC_L55 K4S643232H-TC_L60 K4S643232H-TC_L70 K4S643232H-TC50 K4S643232H-TC55 K4S643232H-TC60 K4S643232H-TL50 K4S643232H-TL55 K4S643232H-TL60 K4S643232H-TC/L50 K4S643232H-TC/L55 K4S643232H-TC/L60 K4S643232H-TC/L70
Description	64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
File Size	115.81K / 12 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba, Corp.
Part No.	TC58FVB160-12 TC58FVB160-85
Description	16M Bit (1M×16bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位（100万16位）的CMOS闪存EEPROM的（1,600 EEPROM中的CMOS与非
File Size	1,523.03K / 30 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD32AD KM418RD32C KM418RD32D KM418RD4AC KM418RD4AD KM418RD4C KM418RD4D KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD8AD KM418RD8C KM418RD32AC KM418RD8AC KM418RD8ACD-RG60 KM418RD8D KM418RD2D KM416RD8D KM416RD16AC KM416RD16AD KM416RD16C KM416RD16D KM416RD2AC KM416RD2AD KM416RD2C KM416RD2D KM416RD32AC KM416RD32AD KM416RD32C KM416RD32D KM416RD4AC KM416RD4AD KM416RD4C KM416RD4D KM416RD8AC_D-RK70 KM416RD8AC_D-RK80 KM416RD8AC_DB-RCG60 KM416RD8AD KM416RD8C KM416RD8ACD-RK80 KM416RD8ACDB-RCG60 KM416RD8ACD-RK70 KM416RD8AC-RK70 KM416RD8AD-RK70 KM418RD8AC-RK70 KM418RD8AD-RK70 KM418RD8AC-RK80 KM418RD16AD
Description	128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
File Size	4,041.48K / 64 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
Description	2m x 32 SDRAM 512K x 32bit x 4 banks synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL 2m x 32 SDRAM 512K x 32bit x 4 banks synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL 512K x 32Bit x 4 banks synchronous DRAM Data Sheet
File Size	100.95K / 12 Page	View it Online	Download Datasheet

				Etron Technology, Inc
Part No.	EM639165TS-8 ETRONTECHNOLOGYINC-EM639165TS-75L
Description	8Mega x 16bits SDRAM 8Mega x 16位内
File Size	666.18K / 48 Page	View it Online	Download Datasheet

				Winbond Electronics WINBOND[Winbond]
Part No.	W986432AH W986432AHA1
Description	512K x 4 banks x 32 BITS SDRAM 512K x 4 banks x 32 BITS SDRAM From old datasheet system
File Size	1,343.55K / 44 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S510832m K4S510832m-TC_TL1H K4S510832m-TC_TL1L K4S510832m-TC_TL75 K4S510832m-TC1H K4S510832m-TC1L K4S510832m-TL75 K4S510832m-TC75 K4S510832m-TL1H K4S510832m-TL1L K4S510832m-TC/TL1L K4S510832m-TC/TL1H K4S510832m-TC/TL75
Description	16M x 8Bit x 4 banks synchronous DRAM Data Sheet 16M x 8bit x 4 banks synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
File Size	110.61K / 11 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIx[Hynix Semiconductor]
Part No.	HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGLTP-6 HY57V64820HGLTP-8 HY57V64820HGLTP-H HY57V64820HGLTP-K HY57V64820HGLTP-P HY57V64820HGLTP-S HY57V64820HGTP-5 HY57V64820HGTP HY57V64820HGTP-55 HY57V64820HGTP-6 HY57V64820HGTP-7 HY57V64820HGTP-8 HY57V64820HGTP-H HY57V64820HGTP-K HY57V64820HGTP-P HY57V64820HGTP-S HY57V64820HGLTP-7
Description	4 banks x 2m x 8Bit synchronous DRAM 8M x 8 synchronOUS DRAM, 5.4 ns, PDSO54 4 banks x 2m x 8Bit synchronous DRAM 8M x 8 synchronOUS DRAM, PDSO54 CAP 0.01UF 50V 10% x7R SMD-0805 TR-13 PLATED-NI/SN 8M x 8 synchronOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
File Size	74.79K / 11 Page	View it Online	Download Datasheet

For 4 banks x 2m x 16bits synchron Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |