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    2SB1091

HITACHI[Hitachi Semiconductor]
Part No. 2SB1091
OCR Text ...ons I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -60 V, IE = 0 VCE = -50 V, RBE = VCE = -3 V, IC = -4 A*1 I C = -4 A, IB = -8 mA*1 I C =...40 0m DC -1.0 -0.5 -0.2 Ta = 25C -0.1 1 Shot pulse -0.05 s er ati on Op 20 0 ...
Description Silicon PNP Triple Diffused

File Size 34.50K  /  6 Page

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    2SB1103

HITACHI[Hitachi Semiconductor]
Part No. 2SB1103
OCR Text ...ons I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -60 V, IE = 0 VCE = -50 V, RBE = VCE = -3 V, IC = -4 A*1 I C = -4 A, IB = -8 mA*1 I C =...40 s 1m = 10 (T C e Op n tio ra s m 20 0 50 100 Case temperature TC (C) ...
Description Silicon PNP Darlington Transistor
Silicon PNP Triple Diffused

File Size 35.86K  /  7 Page

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    2SB1148 2SB1148A B1148

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SB1148 2SB1148A B1148
OCR Text ...752A Unit: mm 7.00.3 3.00.2 3.50.2 s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching I typ...40 -50 -20 -40 -7 -20 -10 15 1.3 150 -55 to +150 Unit V 7.20.3 0.80.2 1.10.1 0.850.1 0.4...
Description Silicon PNP epitaxial planar type(For low-voltage switching)

File Size 57.43K  /  3 Page

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    2SB1154

EPCOS AG
PANASONIC[Panasonic Semiconductor]
Part No. 2SB1154
OCR Text ... MHz s s s 260 min typ max -10 -50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitte...40 - 0.1 20 (3) 0 0 25 (2) - 0.03 50 75 100 125 150 0 -2 -4 -...
Description FILTER PLATE 10 A, 80 V, PNP, Si, POWER TRANSISTOR
Silicon PNP epitaxial planar type(For power switching)

File Size 60.17K  /  3 Page

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    2SB1155

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1155
OCR Text ... MHz s s s 260 min typ max -10 -50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitte...40 - 0.1 20 (2) (3) -4 -40mA -20mA - 0.03 0 0 25 50 75 100 125 150 0 0 -2 -4...
Description Silicon PNP epitaxial planar type(For power switching)

File Size 59.98K  /  3 Page

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    2SB1156 B1156

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1156 B1156
OCR Text ... MHz s s s 260 min typ max -10 -50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitte...40 - 0.03 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 Ambient temperature Ta (C) Col...
Description Silicon PNP epitaxial planar type(For power switching)

File Size 59.94K  /  3 Page

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    2SB1172 2SB1172A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1172 2SB1172A
OCR Text ...uipment 7.00.3 3.00.2 2.00.2 3.50.2 Unit: mm 0 to 0.15 2.50.2 12.60.3 7.20.3 1.10.1 Parameter Collector-base voltage (Emitt...40.1 2.30.2 4.60.4 0.90.1 0 to 0.15 Collector-emitter voltage 2SB1172 (Base open) 2SB1172A Emi...
Description Silicon PNP epitaxial planar type

File Size 75.67K  /  3 Page

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    2SB1175

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1175
OCR Text ...nit: mm 7.00.3 3.00.2 2.00.2 3.50.2 0 to 0.15 2.50.2 1.10.1 1.00.2 0.750.1 0.40.1 2.30.2 4.60.4 0.90.1 0 to 0.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage...
Description Silicon PNP epitaxial planar type

File Size 84.91K  /  4 Page

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    2SB1176

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1176
OCR Text ...nit: mm 7.00.3 3.00.2 2.00.2 3.50.2 0 to 0.15 2.50.2 1.10.1 1.00.2 0.750.1 0.40.1 2.30.2 4.60.4 0.90.1 0 to 0.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage...
Description Silicon PNP epitaxial planar type

File Size 84.74K  /  4 Page

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    2SB1180 2SB1180A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1180 2SB1180A
OCR Text ....3 7.00.3 3.00.2 2.00.2 3.50.2 0 to 0.15 2.50.2 (1.0) (1.0) 1.10.1 1.00.2 Absolute Maximum Ratings TC = 25C Paramet...40.1 2.30.2 4.60.4 1 2 3 0.90.1 0 to 0.15 Collector-emitter voltage 2SB1180 (Base open) 2SB118...
Description Silicon PNP epitaxial planar type darlington

File Size 84.71K  /  4 Page

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