8.40mm pdf Datasheet P9 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : TVV030 2SJ479 MC7815A 015C2 34262P CMZ5351B 91ER1KLF AX168
	Product Description
	Full Text Search

8.40mm Datasheet PDF File

For 8.40mm Found Datasheets File :: 2045 Search Time::1.656ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				INFINEON[Infineon Technologies AG]
Part No.	SPD04N60C3 SPU04N60C3
OCR Text	....4 I D puls EAS Symbol ID 4.5 2.8 13.5 130 mJ Value Unit A Page 1 2003-10-02 Final data Maximum Ratings Parameter Drain Source volt...40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS™ Power Transistor Cool MOS& Power Transistor Cool MOS Power Transistor
File Size	284.38K / 12 Page	View it Online	Download Datasheet

				http:// INFINEON[Infineon Technologies AG]
Part No.	SPD04N60S5 SPDU04N60S5 SPPB04N60S5 SPU04N60S5
OCR Text	...C Symbol ID Value 4.5 2.8 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 3.4 A, VDD =...40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	Cool MOS?/a> Power Transistor Cool MOS⑩ Power Transistor Cool MOS Power Transistor for lowest Conduction Losses
File Size	264.52K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPD50N03S2-07
OCR Text	... =15V, VGS =10V, ID =50A, RG =6.8 - 7.9 14.1 35 5.2 10.5 21.1 46.5 - nC V(plateau) VDD =24V, ID =50A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward volta...
Description	OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 7.3mOhm, 50A, NL
File Size	261.42K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	SPD50N03S2L-06
OCR Text	...GS=0V, Tj=125C A 0.01 10 1 6.8 4.7 1 100 100 9.2 6.4 nA m Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resis...40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	OptiMOS Power-Transistor Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.4mOhm, 50A, LL
File Size	262.34K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPN04N60S5
OCR Text	... VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V A * Ultra low gate charge * Extreme dv/dt rated * Ultra low effective capacitances * ...40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	Cool MOS?/a> Power Transistor Cool MOS⑩ Power Transistor Cool MOS Power Transistor for lowest Conduction Losses
File Size	236.40K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPP10N10 SPB10N10 SPI10N10
OCR Text	...0C Symbol ID Value 10.3 7.8 Unit A Pulsed drain current TC=25C ID puls EAS dv/dt VGS Ptot Tj , Tstg 41.2 60 6 20 50 -55.....40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=180mOhm, 10A, NL SIPMOS Power-Transistor SIPMOS功率晶体
File Size	480.13K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BCP72M Q62702-C2517 SIEMENSAG-Q62702-C2517
OCR Text	... Collector cutoff current VCB = 8 V, IE = 0 Collector cutoff current VCB = 8 V, IE = 0 , T A = 150 C Emitter cutoff current VEB = 4 V, I C = 0 DC current gain 1) I C = 10 mA, VCE = 5 V I C = 500 mA, V CE = 1 V I C = 2 A, VCE = 2...
Description	PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)
File Size	28.76K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BCR183S Q62702-C2377 BCR183SQ62702C2377
OCR Text	...t IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage Vi(on) 1 ...
Description	TRANSISTOR DIGITAL SOT363 PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) From old datasheet system
File Size	43.88K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BCR183W Q62702-C2276
OCR Text	...t IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage Vi(on) 1 ...
Description	PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) From old datasheet system
File Size	34.79K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BCR183 Q62702-C2262 Q62702-F572
OCR Text	...t IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage Vi(on) 1 ...
Description	NPN SILICON RF TRANSISTOR PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) From old datasheet system
File Size	35.34K / 4 Page	View it Online	Download Datasheet

For 8.40mm Found Datasheets File :: 2045 Search Time::1.656ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |