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TT electronics Semelab Limited
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| Part No. |
BUL52BFI
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| OCR Text |
...g and storage temperature range 800v 400v 10v 8a 12a 4a 45w C55 to +150c mechanical data dimensions in mm 123 15.1 10.2 6.3 3.6 dia. 1.3 14....20ma i c = 1a i b = 0.2a i c = 2a i b = 0.4a i c = 3a i b = 0.6a i c = 1a i b = 0.2a i c = 2a i b = ... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
18.73K /
2 Page |
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Microsemi Corporation
Microsemi, Corp.
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| Part No. |
APTM100UM65DAG08
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| OCR Text |
...rain current v gs = 0v,v ds = 800v t j = 125c 2 ma r ds(on) drain ? source on resistance v gs = 10v, i d = 72.5a 65 78 m v gs(th) gate threshold voltage v gs = v ds , i d = 20ma 3 5 v i gss gate ? source lea... |
| Description |
Single switch with Series diode MOSFET Power Module 145 A, 1000 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
248.30K /
6 Page |
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it Online |
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ST Microelectronics
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| Part No. |
ACST8-8CG ACST8-8CG-TR ACST8-8CT
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| OCR Text |
...URES
VDRM /VRRM = +/- 800v Avalanche controlled device IT(RMS) = 8A with TCASE = 90 C High noise immunity: static dV/dt > 750 V/s ...20ma IOUT = 11A tp = 380s RL = 3.3k Gate open Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 25C Tj = 25C... |
| Description |
OVER VOLTAGE PROTECTED AC POWER SWITCH
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| File Size |
132.02K /
11 Page |
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it Online |
Download Datasheet |
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