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  8m x 4bit x 2 banks synchronou Datasheet PDF File

For 8m x 4bit x 2 banks synchronou Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

    KM44C4100C KM44C4000C KM44V4100C

Samsung semiconductor
Part No. KM44C4100C KM44C4000C KM44V4100C
Description 4M x 4bit CMOS Dynamic RAM with Fast Page Mode

File Size 344.26K  /  20 Page

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    Winbond Electronics Corp
http://
Winbond Electronics, Corp.
Part No. W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I
Description 1M × 4 banks × 16 BITS SDRAM
1M 4 banks 16 BITS SDRAM 4M x 16 synchronouS DRAM, 5.5 ns, PDSO54

File Size 1,182.51K  /  43 Page

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    K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
Description 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.

File Size 304.91K  /  20 Page

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    W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6

Winbond Electronics Corp
WINBOND[Winbond]
Part No. W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6
Description 2M x 4 banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 banks x 16 BIT SDRAM
DRAM - Datasheet Reference

File Size 1,313.72K  /  41 Page

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    K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4S640832E-TL1H K4S640832E-TL1L K4S640832E-TL75 K4S640832E

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4S640832E-TL1H K4S640832E-TL1L K4S640832E-TL75 K4S640832E
Description 64Mbit SDRAM 2M x 8Bit x 4 banks synchronous DRAM LVTTL
2M x 8Bit x 4 banks synchronous DRAM Data Sheet

File Size 125.55K  /  10 Page

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    KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S8030DT-GF8

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S8030DT-GF8
Description 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz
64Mbit SDRAM 2M x 8Bit x 4 banks synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz

File Size 116.15K  /  11 Page

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    Fujitsu Limited
Part No. MB814405D-60L MB814405D-7OL
Description 1M ×4bit Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超级页面存取模式动态RAM)

File Size 362.09K  /  29 Page

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    SAMSUNG
Part No. KM44C16000B KM44C16100B
Description 16M x 4bit CMOS Dynamic RAM with Fast Page Mode

File Size 338.75K  /  20 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4F160411C-B K4F170411C-F K4F170411C-B K4F160411C-F K4F160412C-B K4F170412C-B K4F160412C-F K4F170412C-F
Description 4M x 4bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模

File Size 227.73K  /  20 Page

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    K4F640412D K4F660412D

SAMSUNG[Samsung semiconductor]
Part No. K4F640412D K4F660412D
Description 16M x 4bit CMOS Dynamic RAM with Fast Page Mode

File Size 366.75K  /  20 Page

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For 8m x 4bit x 2 banks synchronou Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

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