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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD20HMF1
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| OCR Text |
...Silicon MOSFET Power Transistor,900mhz,20W
OUTLINE
RD20HMF1 is a MOS FET type transistor specifically designed for 900mhz-band RF power amplifiers applications.
High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900mhz High Efficiency:... |
| Description |
Silicon MOSFET Power Transistor,900mhz,20W
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| File Size |
333.23K /
7 Page |
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Download Datasheet
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Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702G63 CGY96
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| OCR Text |
...ower (Vd=3.5V, Vcontrol=2.2V, f=900mhz, duty cycle 12.5%, ton=577s)
38 37 36 35 34 33
75 70 65 60 55 50 45 40
Po ut [d B m]
32 31 30 29 28 27 26 25 24 23 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 Pout ... |
| Description |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%)
From old datasheet system
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| File Size |
99.86K /
10 Page |
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New Jersey Semi-Conductor Products, Inc.
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| Part No. |
BFG193
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| OCR Text |
...v;f=1mhz lc= 30ma ; vce= 8v; f= 900mhz lc= 30ma ; vce= 8v; f= 1 ,8ghz lc= 30ma ; vge= 8v; f= 900mhz lc= 30ma ; vce= 8v; f= 1 ,8ghz lc= 10ma ; vce= 8v; f= 900mhz lc= 1 0ma ; vce= 8v; f= 1 .8ghz min 12 50 6 typ. 8 0.6 15.5 10 13.5 8 1.3 2.1 m... |
| Description |
Silicon NPN RF Transistor
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| File Size |
69.49K /
2 Page |
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it Online |
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RFMD
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| Part No. |
SPF5189Z
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| OCR Text |
...tra-low noise figure=0.60db at 900mhz ? gain=18.7db at 900mhz ? high linearity: oip 3 =39.5dbm at 1960mhz ? p 1db =22.7dbm at 1960mhz ? single-supply operation: 5v at i dq =90ma ? flexible biasing options: 3v to 5v, adjustable current ... |
| Description |
GaAs pHEMT LOW NOISE MMIC AMPLIFIER
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| File Size |
972.55K /
11 Page |
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it Online |
Download Datasheet |
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Price and Availability
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