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For double-row Found Datasheets File :: 4367 Search Time::0.907ms
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				VIA Technologies ETC N.A.
Part No.	VT82C693
OCR Text	...WI, etc.) - Forty-eight levels (double-words) of post write buffers from PCI masters to DRAM - Sixteen levels (double-words) of prefetch buf...row and column addresses - 64-bit data width only - 3.3V DRAM interface with 5V-tolerant inputs - Pr...
Description	APOLLO PRO-PLUS
File Size	122.76K / 7 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC[ETC]
Part No.	VV5402
OCR Text	...drive standard loads, including double terminated lines. Automatic Gain Control (AGC) The VV5402 automatically increases the system gain...row or column (>50% of row or column) faults in any area. Area C Any number Max. No. of Blemishes ...
Description	VV5402 Monolithic Sensor
File Size	157.84K / 16 Page	View it Online	Download Datasheet

				VLSI Vision Limited ETC[ETC]
Part No.	VV5430
OCR Text	...drive standard loads, including double terminated lines. The video signal can also be inhibited by setting the output to a high impedance st...row or column (>50% of row or column) faults in any area. Area C This is the most critical image ...
Description	Integrated CMOS Image Sensor with support for ADC and external control via serial interface
File Size	287.37K / 32 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016C3F-TQ70 K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q K6X4016C3F-TB55 K6X4016C3F-TB70 K6X4016C3F-TF70
OCR Text	...neously asserting UB and LB for double byte operation. A write ends at the earliest transition when CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the CS going low...
Description	256Kx16 bit Low Power full CMOS Static RAM 256Kx16位充分的CMOS低功耗静态存储器
File Size	129.39K / 9 Page	View it Online	Download Datasheet

				TRIQUINT[TriQuint Semiconductor]
Part No.	TQ8016 TQ8016-M
OCR Text	...he switch reconfiguration. This double row architecture minimizes the time to completely reconfigure the switch since a new set of addresses can be loaded to the Output Select Latches (R1) while the switch is active (transmitting). At the t...
Description	1.3 gigabit/sec crosspoint switch 1.3 Gigabit/sec 16x16 Digital ECL Crosspoint Switch
File Size	233.11K / 9 Page	View it Online	Download Datasheet

				ELPIDA[Elpida Memory]
Part No.	EDD5104ABTA-6B EDD5108ABTA-6B EDD5104ABTA EDD5104ABTA-7A EDD5104ABTA-7B EDD5108ABTA-7B EDD5108ABTA EDD5108ABTA-7A
OCR Text	...n The EDD5104AB is a 512M bits Double Data Rate (DDR) SDRAM organized as 33,554,432 words x 4 bits x 4 banks. The EDD5108AB is a 512M bits ...Row address strobe command Column address strobe command Write enable Input mask Clock input Differe...
Description	512M bits DDR SDRAM
File Size	430.36K / 50 Page	View it Online	Download Datasheet

				http:// Holtek Semiconductor Inc
Part No.	HT6221 HT6222 6221_2
OCR Text	... * * * PPM code method Three double-active keys Maximum active keys - HT6221: 32 keys - HT6222: 64 keys Low power and high noise immunity...Row control for keyboard matrix, active high Serial data output pin, with a 38kHz carrier Positive p...
Description	Multi-Purpose Encoders From old datasheet system
File Size	148.69K / 13 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K3S7V2000M-TC15 K3S7V2000M-TC20 K3S7V2000M-TC30 K3S7V2000M-TC K3S7V2000M-TC10 K3S7V2000M-TC12
OCR Text	... 16(word mode) / 2,097,152 x 32(double word mode) * All inputs are sampled at the rising edge of the system clock * Read Performance at memo...Row Decoder Sense AMP. Row Buffer 4M x 16 /2M x 32 Cell Array Address Register CLK AD...
Description	2M x 32 Synchronous MASKROM Data Sheet 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
File Size	1,077.97K / 27 Page	View it Online	Download Datasheet

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