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  earless Datasheet PDF File

For earless Found Datasheets File :: 162    Search Time::1.109ms    
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    Analog Devices, Inc.
AD[Analog Devices]
Part No. BLC6G20LS-140 BLC6G20-140
OCR Text ...mounting slots; 2 leads plastic earless flanged cavity package; 2 leads Version SOT895-1 SOT896-1 Type number 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ...
Description UHF power LDMOS transistor

File Size 43.33K  /  9 Page

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    BLF6G20LS-140

NXP Semiconductors
Part No. BLF6G20LS-140
OCR Text ...ription version blf6g20ls-140 - earless ?anged ldmost ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source vo...
Description Power LDMOS transistor

File Size 58.25K  /  8 Page

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    BLF4G20LS-130

NXP Semiconductors
Part No. BLF4G20LS-130
OCR Text ...ription version blf4g20ls-130 - earless ?anged ldmost ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source vo...
Description UHF power LDMOS transistor

File Size 70.19K  /  11 Page

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    PTFA071701E PTFA071701F

Infineon Technologies AG
Part No. PTFA071701E PTFA071701F
OCR Text ...50 pcs ptfa071701f v4 h-37248-2 earless flange, single-ended tray ptfa071701f v4 r250 h-37248-2 earless flange, single-ended tape & reel 250 pcs *see infineon distributor for future availability. data sheet 3 of 9 rev. 03, 2009-11-11 ptfa...
Description Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 ?770 MHz

File Size 246.09K  /  8 Page

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    NXP Semiconductors N.V.
Part No. BLF7G15LS-200
OCR Text ...ription version blf7g15ls-200 - earless flanged ldmost ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source v...
Description Power LDMOS transistor

File Size 95.74K  /  11 Page

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    NXP Semiconductors N.V.
Part No. BLF6G15L-40RN BLF6G15LS-40RN
OCR Text ...leads sot1135a blf6g15ls-40rn - earless flanged ceramic package; 2 leads sot1135b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage...
Description Power LDMOS transistor BLF6G15LS-40RN<SOT1135B (CDFM2)|<<http://www.nxp.com/packages/SOT1135B.html<1<Always Pb-free,;BLF6G15LS-40RN<SOT1135B (CDFM2)|<<http://www.nxp.com/packages/SOT1135B.html<1<Always Pb-free,;

File Size 72.32K  /  9 Page

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    PTFA192001F PTFA192001E

Infineon Technologies AG
Part No. PTFA192001F PTFA192001E
OCR Text ...hanced packages with slotted or earless flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptfa192001e package h-36260-2 thermally-enhanced high power ...
Description Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz

File Size 277.07K  /  11 Page

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    PTFB182503FL PTFB182503EL

Infineon Technologies AG
Part No. PTFB182503FL PTFB182503EL
OCR Text ...h-34288-4/2 thermally-enhanced earless fange, single-ended tray ptfb182503fl v2 r250 h-34288-4/2 thermally-enhanced earless fange, single-ended tape & reel, 250 pcs ptfb182503el ptfb182503fl confidential, limited internal distrib...
Description Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz

File Size 510.93K  /  12 Page

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    Infineon Technologies
Part No. PTFA181001F
OCR Text ...hanced packages with slotted or earless flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptf a181001e package h- 36248-2 thermally-enhanced high powe...
Description Thermally-Enhanced High Power RF LDMOS FET

File Size 416.43K  /  11 Page

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    NXP Semiconductors N.V.
Part No. BLF6G22S-45112
OCR Text ...n version blf6g22s-45 - ceramic earless ?anged package; 2 leads sot608b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v ...
Description Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;

File Size 59.48K  /  10 Page

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For earless Found Datasheets File :: 162    Search Time::1.109ms    
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