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Analog Devices, Inc. AD[Analog Devices]
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| Part No. |
BLC6G20LS-140 BLC6G20-140
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| OCR Text |
...mounting slots; 2 leads plastic earless flanged cavity package; 2 leads Version SOT895-1 SOT896-1 Type number
4. Limiting values
Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ... |
| Description |
UHF power LDMOS transistor
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| File Size |
43.33K /
9 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF7G15LS-200
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| OCR Text |
...ription version blf7g15ls-200 - earless flanged ldmost ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source v... |
| Description |
Power LDMOS transistor
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| File Size |
95.74K /
11 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF6G15L-40RN BLF6G15LS-40RN
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| OCR Text |
...leads sot1135a blf6g15ls-40rn - earless flanged ceramic package; 2 leads sot1135b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage... |
| Description |
Power LDMOS transistor BLF6G15LS-40RN<SOT1135B (CDFM2)|<<http://www.nxp.com/packages/SOT1135B.html<1<Always Pb-free,;BLF6G15LS-40RN<SOT1135B (CDFM2)|<<http://www.nxp.com/packages/SOT1135B.html<1<Always Pb-free,;
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| File Size |
72.32K /
9 Page |
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it Online |
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Infineon Technologies
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| Part No. |
PTFA181001F
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| OCR Text |
...hanced packages with slotted or earless flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptf a181001e package h- 36248-2 thermally-enhanced high powe... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET
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| File Size |
416.43K /
11 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF6G22S-45112
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| OCR Text |
...n version blf6g22s-45 - ceramic earless ?anged package; 2 leads sot608b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v ... |
| Description |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
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| File Size |
59.48K /
10 Page |
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it Online |
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Price and Availability
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