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ONSEMI[ON Semiconductor]
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Part No. |
NSS35200CF8T1G
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Description |
high current Surface Mount PNP Silicon Low VCE-SAT Switching Transistor for load Management in Portable Applications
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File Size |
66.49K /
6 Page |
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it Online |
Download Datasheet
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Vishay Intertechnology,Inc.
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Part No. |
VCS232Z
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Description |
Ultra high Precision Z-Foil Power current Sensing Resistor with Absolute TCR of 0.05 ppm/∑C and load Life Stability to 0.005%
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File Size |
93.62K /
3 Page |
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it Online |
Download Datasheet
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VISAY[Vishay Siliconix]
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Part No. |
VCS232Z
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Description |
Ultra high Precision Z-Foil Power current Sensing Resistor with Absolute TCR of 【 0.05 ppm/∑C and load Life Stability to 【 0.005%
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File Size |
89.79K /
3 Page |
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it Online |
Download Datasheet
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Matsushita Electric Works(Nais)
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Part No. |
AQV414SX
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Description |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Picked from the 1/2/3-pin side
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File Size |
43.56K /
3 Page |
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it Online |
Download Datasheet
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TY Semiconductor Co., Ltd
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Part No. |
FZT853
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Description |
Extremely low equivalent on-resistance; RCE(sat) 44mù at 5A, 6 Amps continuous current, up to 20 Amps peak current
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File Size |
109.95K /
2 Page |
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it Online |
Download Datasheet
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Part No. |
PTE2030G4A PTE2100G1A PTE2030G1A PTE2005G1A
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Description |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; continuous Drain current, Id:54A; On-Resistance, Rds(on):14mohm; Rds(on) Test MOSFET; Drain Source Voltage, Vds:20V; continuous Drain current, Id:54A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process MOSFET; Drain Source Voltage, Vds:55V; continuous Drain current, Id:10A; On-Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:DPAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
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File Size |
179.37K /
5 Page |
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it Online |
Download Datasheet
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Price and Availability
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