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  ic-smd-sram 1mb 1mb Datasheet PDF File

For ic-smd-sram 1mb 1mb Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

    5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 5962D9960601TUA 5962D9960601TUC 5962D9960601TUX 5962D9960602QUA 5962D996

Aeroflex Circuit Technology
Part No. 5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 5962D9960601TUA 5962D9960601TUC 5962D9960601TUX 5962D9960602QUA 5962D9960602QUC 5962D9960602QUX 5962D9960602TUA 5962D9960602TUX 5962D9960602TUC 5962-9960601TUA 5962-9960602TUX 5962-9960601TUC 5962P9960601TUA 5962P9960601TUC 5962P9960601TUX UT7Q512K-UPX UT7Q512K-UWC
Description 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option.
512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.

File Size 106.53K  /  16 Page

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    BAS16DXV6T1/D BAS16DXV6T1 BAS16XV2T1

ON Semiconductor
Part No. BAS16DXV6T1/D BAS16DXV6T1 BAS16XV2T1
Description ICS SRAM 32KX8-12NS SMD
General Switching Diode 75V

File Size 65.82K  /  6 Page

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    STMicroelectronics N.V.
意法半导
ST Microelectronics
Part No. M48T18-150PC1 M48T18-150MH1 M48T18-150MH1TR M48T18-150PC1TR M48T08-100PC1 M48T08-100MH1 M48T08-100MH1TR M48T08-150MH1 M48T08-150MH1TR M48T08-100PC1TR M48T08Y-10MH1 M48T08Y-10MH1E M48T08Y-10MH1TR M48T08Y-10MH1F M48T08-150PC1TR M48T18PC M48T18-100MH1 M48T18-100MH1TR M48T18-100PC1 M48T18-100PC1TR M48T18MH M48T18SH M48T08 M48T08SH
Description 64 Kbit 8Kb x 8 TIMEKEEPER SRAM 64千位kB × 8计时器的SRAM
High Q MLC; Capacitor Type:High Q; Capacitance:1000pF; Capacitance Tolerance: /- 10%; Voltage Rating:1500VDC; Capacitor Dielectric Material:Multilayer Ceramic; Termination:SMD; Dielectric Characteristic:C0G/NP0; Series:HQCC RoHS Compliant: Yes
64K (8K X 8) TIMEKEEPER SRAM

File Size 158.13K  /  27 Page

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    Alliance Semiconductor Corp...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
Part No. AS7C33128PFD32_36B AS7C33128PFD36B-200TQIN AS7C33128PFD32B AS7C33128PFD32B-133TQC AS7C33128PFD32B-133TQCN AS7C33128PFD32B-133TQI AS7C33128PFD32B-133TQIN AS7C33128PFD32B-166TQC AS7C33128PFD32B-166TQCN AS7C33128PFD32B-166TQI AS7C33128PFD32B-166TQIN AS7C33128PFD32B-200TQC AS7C33128PFD32B-200TQCN AS7C33128PFD32B-200TQI AS7C33128PFD32B-200TQIN AS7C33128PFD36B-133TQC AS7C33128PFD36B-133TQCN AS7C33128PFD36B-133TQI AS7C33128PFD36B-133TQIN AS7C33128PFD36B-166TQC AS7C33128PFD36B-166TQCN AS7C33128PFD36B-166TQI AS7C33128PFD36B-166TQIN AS7C33128PFD36B-200TQC AS7C33128PFD36B-200TQCN AS7C33128PFD36B-200TQI
Description Sync SRAM - 3.3V
LM397 Single General Purpose Voltage Comparator; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 4 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 4 ns, PQFP100
128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100
128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3.5 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 3.3 128K的X 32/36管道爆裂同步SRAM

File Size 530.02K  /  19 Page

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    Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
Part No. CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V18-375BZC CY7C1166V18-400BZXC
Description 1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165

File Size 455.35K  /  27 Page

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    Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Part No. AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32A-100TQC AS7C3364PFS32A-100TQI AS7C3364PFS32A-133TQC AS7C3364PFS32A-133TQI AS7C3364PFS32A-150TQC AS7C3364PFS32A-150TQI AS7C3364PFS32A-166TQC AS7C3364PFS32A-166TQI AS7C3364PFS36A AS7C3364PFS36A-100TQC AS7C3364PFS36A-100TQI AS7C3364PFS36A-133TQC AS7C3364PFS36A-133TQI AS7C3364PFS36A-150TQC AS7C3364PFS36A-150TQI AS7C3364PFS36A-166TQC
Description 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100

File Size 216.30K  /  11 Page

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    AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT32A-10TQCN AS7C25512FT32A-10TQI AS7C25512FT32A-10TQIN AS7C25512FT32A-7

Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
Part No. AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT32A-10TQCN AS7C25512FT32A-10TQI AS7C25512FT32A-10TQIN AS7C25512FT32A-75TQC AS7C25512FT32A-75TQCN AS7C25512FT32A-75TQI AS7C25512FT32A-75TQIN AS7C25512FT32A-85TQC AS7C25512FT32A-85TQCN AS7C25512FT32A-85TQI AS7C25512FT32A-85TQIN AS7C25512FT36A-10TQC AS7C25512FT36A-10TQCN AS7C25512FT36A-10TQI AS7C25512FT36A-10TQIN AS7C25512FT36A-75TQC AS7C25512FT36A-75TQCN AS7C25512FT36A-75TQI AS7C25512FT36A-75TQIN AS7C25512FT36A-85TQC AS7C25512FT36A-85TQCN AS7C25512FT36A-85TQI AS7C25512FT36A-85TQIN
Description 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
   2.5V 512K x 32/36 flowthrough burst synchronous SRAM

File Size 506.04K  /  19 Page

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    Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Part No. AS7C251MNTD18A AS7C251MNTD18A-166TQIN AS7C251MNTD18A-133TQC AS7C251MNTD18A-133TQCN AS7C251MNTD18A-133TQI AS7C251MNTD18A-133TQIN AS7C251MNTD18A-166TQC AS7C251MNTD18A-166TQCN AS7C251MNTD18A-166TQI
Description 2.5V 1M x 18 Pipelined SRAM with NTD 1M X 18 ZBT SRAM, 3.8 ns, PQFP100
Current Mode PWMs; Package: DIP;
NTD? Sync SRAM - 2.5V

File Size 419.26K  /  18 Page

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    Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Part No. AS7C3256A-8 AS7C3256A-8TCN AS7C3256A-8JC AS7C3256A-8JCN AS7C3256A-8TC
Description SRAM - 3.3V Fast Asynchronous
3.3V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 8 ns, PDSO28
Dual 4-Input Positive-AND Gate 14-SSOP -40 to 85 32K X 8 STANDARD SRAM, 8 ns, PDSO28

File Size 285.49K  /  9 Page

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    FYLS-1206HX FYLS-1206LRX FYLS-1206LRD FYLS-1206LRT FYLS-1206SRX FYLS-1206SRC FYLS-1206XX HCF4010BEY HCF4010BM1 K7Q161864

List of Unclassifed Manufacturers
ETC[ETC]
SAMSUNG
STMICROELECTRONICS
Part No. FYLS-1206HX FYLS-1206LRX FYLS-1206LRD FYLS-1206LRT FYLS-1206SRX FYLS-1206SRC FYLS-1206XX HCF4010BEY HCF4010BM1 K7Q161864B K7Q161864B-FC16 K7Q163664B K7Q163664B-FC16 FYLS-1206YX FYLS-1206AC FYLS-1206AD FYLS-1206AT FYLS-1206AX FYLS-1206EC FYLS-1206ED FYLS-1206ET FYLS-1206EX FYLS-1206GC FYLS-1206GD FYLS-1206GT FYLS-1206GX FYLS-1206HC FYLS-1206HD FYLS-1206HT FYLS-1206LRC FYLS-1206SRD FYLS-1206SRT FYLS-1206URC FYLS-1206URD FYLS-1206URT FYLS-1206URX FYLS-1206YC FYLS-1206YD FYLS-1206YT
Description 512Kx36 & 1Mx18 QDR TM b4 SRAM
HEX BUFFER/CONVERTER (NON INVERTING)
SMD LAMP
FYLS-1206LRX

File Size 88.28K  /  4 Page

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