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  j-mos Datasheet PDF File

For j-mos Found Datasheets File :: 10765    Search Time::2.547ms    
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    IPS512G IPS511G IPS511GTR

IRF[International Rectifier]
Part No. IPS512G IPS511G IPS511GTR
OCR Text ... 50 95 4 -- 50 50 6 -- 15 s V/s J s V/s J s See figure 3 See figure 4 Protection Characteristics Symbol Parameter Ilim Internal current limit Tsd+ Over-temp. positive going threshold TsdOver-temp. negative going threshold Vsc Sho...
Description FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
Intelligent Power Switch 2 Channel High Side Driver in a SO-16 Package

File Size 179.43K  /  11 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10035JLL_03 APT10035JLL APT10035JLL03
OCR Text ...122 12 10 36 9 900 623 1423 779 J ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 89.74K  /  5 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT10035LFLL APT10035B2FLL APT10035B2FLL_03 APT10035B2FLL03
OCR Text ...Recovery 1 2 dt nC ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns 28 112 1.3 18 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (VGS = 0V, IS = -28A) 5 dv/ t...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 88.90K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10035LLL APT10035B2LL APT10035B2LL_03 APT10035B2LL03
OCR Text ...122 12 10 36 9 900 623 1423 779 J ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 90.00K  /  5 Page

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    BS107

NXP Semiconductors
Philips Semiconductors
Part No. BS107
OCR Text ... THERMAL RESISTANCE SYMBOL Rth j-a from junction to ambient PARAMETER MAX. 150 UNIT K/W April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor CHARACTERISTICS Tj = 25 ...
Description N-channel enhancement mode vertical D-MOS transistor

File Size 61.10K  /  12 Page

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    APT1003RKLL APT1003RKLLG

Microsemi Corporation
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT1003RKLL APT1003RKLLG
OCR Text ...5 34 5 22 8 4 25 10 13 42 40 48 J ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off S...
Description Power MOS 7 is a new generation of low loss, high voltage, N-Channel
POWER MOS 7 MOSFET MOSFET的功率MOS 7

File Size 92.64K  /  5 Page

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    Advanced Power Technology, Ltd.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT1003RSLL APT1003RBLL
OCR Text ...5 34 5 22 8 4 25 10 13 42 40 48 J ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off S...
Description POWER MOS 7 MOSFET MOSFET的功率MOS 7

File Size 99.14K  /  5 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT10045JFLL_03 APT10045JFLL APT10045JFLL03
OCR Text ...Recovery 1 2 dt nC ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns 23 92 1.3 18 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (VGS = 0V, IS = -21A) 5 dv/ t ...
Description    Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 91.20K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10045JLL_03 APT10045JLL APT10045JLL03
OCR Text ...6 97 10 5 30 8 639 380 1046 451 J ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off S...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 91.05K  /  5 Page

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