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For mes Found Datasheets File :: 551 Search Time::1.329ms
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				Dialight PLC DIALIGHT CORP
Part No.	550-2305F 550-1305F 550-1005F 550-5305F 550-5105F 550-5805F 550-5705F
OCR Text	... wavelength "565" was 560". klj mes n.o. 4-16-08 c updated following specifications for 550-0505f: min lum int "2.1" was "1.0"; max if "15" was "20"; peak wavelength "635" was "655". klj no mes 5-2-08 d updated following specifications for ...
Description	LED Lamp; Leaded Process Compatible:Yes T-1 3/4 SINGLE COLOR LED, YELLOW, 5 mm LED Lamp; Color:Green; Luminous Intensity (MSCP):1.8; Forward Current:2mA; Forward Voltage:1.8V; LED Color:Green; Leaded Process Compatible:Yes T-1 3/4 SINGLE COLOR LED, GREEN, 5 mm LED 5MM R/A BLUE WATER CLEAR T-1 3/4 SINGLE COLOR LED, BLUE, 5 mm LED 5MM RT ANG SUP DIFF YEL PCMT T-1 3/4 SINGLE COLOR LED, YELLOW, 5 mm LED 5MM RT ANG SUP DIFF RED PCMN T-1 3/4 SINGLE COLOR LED, RED, 5 mm T-1 3/4 SINGLE COLOR LED, AMBER, 5 mm ROHS COMPLIANT PACKAGE-2 T-1 3/4 SINGLE COLOR LED, YELLOW, 5 mm ROHS COMPLIANT PACKAGE-2
File Size	185.18K / 1 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60F4DPK11
OCR Text	...gy losses e ( ) switching ti mes t (ns) 1 10 200100 10 1000 100 100000 10000 swithing energy losses e ( ) 1 10 100 collector current i c (a) (inductive load) eoff eon switching characteristics ( typical) (1) switching chara...
Description	Silicon N Channel IGBT High Speed Power Switching
File Size	82.38K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60D5DPM
OCR Text	...gy losses e (j) switching ti mes t (ns) 1 10 200100 10 1000 100 100000 10000 v cc = 300 v, v ge = 15 v rg = 5 , ta = 25 c swithing energy losses e (j) 1 10 200100 collector current i c (a) (inductive load) e off eon 1 10...
Description	Silicon N Channel IGBT Application: Inverter
File Size	79.09K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60D5DPK10
OCR Text	...gy losses e (j) switching ti mes t (ns) 1 10 200100 10 1000 100 100000 10000 v cc = 300 v, v ge = 15 v rg = 5 , ta = 25 c swithing energy losses e (j) 1 10 200100 collector current i c (a) (inductive load) e off eon 1 10...
Description	Silicon N Channel IGBT Application: Inverter
File Size	79.07K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60F7BDPQ-A0
OCR Text	...inductive load) switching ti mes t (ns) v cc = 400 v, v ge = 15 v rg = 5 , tj = 150 c t d(off) t d(on) t f t r 1 10 100 switching characteristics ( typi cal) (3) t d(on) gate resistance rg () (inductive load) switching ti me ...
Description	600V - 50A - IGBT High Speed Power Switching
File Size	91.15K / 9 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60F6BDPQ-A0
OCR Text	...inductive load) switching ti mes t (ns) v cc = 400 v, v ge = 15 v rg = 5 150 c t d(off) t d(on) t f t r 11 01 0 0 switching characteristics ( typi cal) (3) t d(on) gate resistance rg () (inductive load) switching ti me t (ns...
Description	600V - 45A - IGBT High Speed Power Switching
File Size	91.06K / 9 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60F5BDPQ-A0
OCR Text	...cs ( typi cal) (2) switching ti mes t (n s) v cc = 400 v, v ge = 15 v rg = 5 , tj = 25 c t r include s the diode recover y v cc = 400 v, v ge = 15 v rg = 5 , tj = 25 c t d(off) t d(on) t f t r 1 10 100 switching characteristics ( ...
Description	600V - 40A - IGBT High Speed Power Switching
File Size	90.69K / 9 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60D2DPP-M010
OCR Text	...gy losses e (j) switching ti mes t (ns) swithing energy losses e (j) collector current i c (a) (inductive load) v cc = 300 v, v ge = 15 v rg = 5 , t a = 25 c eoff eon 1 100 10 1000 switching characteristics ( typical) (1...
Description	Silicon N Channel IGBT Application: Inverter
File Size	78.94K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60D2DPE10
OCR Text	...rgy losses e () switching ti mes t (ns) switching characteristics ( typical) (3) switching characteristics ( typical) (4) 1 100 10 v cc = 300 v, v ge = 15 v rg = 5 a = 25 c 1 100 10 1 10000 1000 100 10 swithing energy losses e ...
Description	Silicon N Channel IGBT Application: Inverter
File Size	79.35K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60D1DPE11
OCR Text	...rgy losses e () switching ti mes t (ns) switching characteristics ( typical) (3) switching characteristics ( typical) (4) v cc = 300 v, v ge = 15 v rg = 5 a = 25 c 10000 1000 100 10 swithing energy losses e () collector curren...
Description	Silicon N Channel IGBT Application: Inverter
File Size	77.55K / 8 Page	View it Online	Download Datasheet

For mes Found Datasheets File :: 551 Search Time::1.329ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |