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CDG24 G2CQ60F PF503 D12S400A LA633 1AA04 CD110PT 08P06
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  mocvd Datasheet PDF File

For mocvd Found Datasheets File :: 117    Search Time::1.312ms    
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    LX5506B LX5506BLQ

MICROSEMI[Microsemi Corporation]
Part No. LX5506B LX5506BLQ
OCR Text ...ar Transistor (HBT) IC process (mocvd). It operates with a single positive voltage supply of 3.3V (nominal), with +26dBm of P1dB and up to 25dB power gain in the 5.15 - 5.85GHz frequency range with a simple output matching capacitor pair...
Description InGaP HBT 4 6GHz Power Amplifier
From old datasheet system
InGaP HBT 4 6GHz Power Amplifier

File Size 195.65K  /  7 Page

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    SZA-2044

Electronic Theatre Controls, Inc.
ETC
Part No. SZA-2044
OCR Text ... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. This product is specifically designed as a final stage for 802.11b/g and 801.16 equipment in the 2.0-2.7 GHz bands. It can run from a 3V to 5V ...
Description From old datasheet system
2.0-2.7 GHz 5V 1W Power Amplifier

File Size 241.88K  /  8 Page

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    SONY
Part No. SLD201U-3/V-3
OCR Text mocvd. features high power laser diode with the excellent general purpose application optical disc, laser printer structure algaas double-hetero laser diode, pin photo diode included for monitoring the laser radiant power output recommended...
Description 50mW High Power Laser Diode

File Size 74.79K  /  4 Page

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    Microsemi
Part No. MWS11-GB11-X1
OCR Text ...olar transistor (hbt) process (mocvd). this rfic amplifier was designed as an easily cascadable 50 ohm gain block. the device is self-contained with 50 ohm input and output impedance. applications in- clude if and rf amplification i...
Description Gain Block (InGaP HBT)

File Size 31.90K  /  1 Page

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    Mitsubishi Electric Corporation
Part No. ML60125R ML601J25
OCR Text ... ml6xx25 is produced by the mocvd crystal life semiconductor laser. features absolute maximum ratings (note 1) electrical/optical characteristics (tc=25?c) optical disc drive application mitsubishi electric symbol parameter con...
Description LASER DIODES FOR OPTICAL INFORMATION SYSTEMS

File Size 65.48K  /  2 Page

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    Sirenea
Part No. SZA2044
OCR Text ...technology and fabricated with mocvd for an ideal combi- nation of low cost and high reliability. this product is specifically designed as a final stage for 802.11b/g and 801.16 equipment in the 2.0-2.7 ghz bands. it can run from a 3v ...
Description Power Amplifier

File Size 279.96K  /  8 Page

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    LX5512BLQ LX5512BLQ-TR LX5512B05

Microsemi Corporation
Part No. LX5512BLQ LX5512BLQ-TR LX5512B05
OCR Text ... transistor (hbt) ic process (mocvd). it operates at a single low voltage supply of 3.3v with 32 db power gain between 2.4-2.5ghz, at a low quiescent current of 65ma. for 19dbm ofdm output power (64qam, 54mbps), the pa provides a ...
Description InGaP HBT 2.4 ?2.5 GHz Power Amplifier

File Size 544.28K  /  8 Page

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    LX5518LQ

Microsemi Corporation
Part No. LX5518LQ
OCR Text ... transistor (hbt) ic process (mocvd). it operates with a single positive voltage supply of 3-5v, and provides a power gain of 30db and an output power of +26dbm at 5v for 3% evm in the 2.4-2.5ghz. lx5518 also features an on-chip pow...
Description InGaP HBT 2.4 - 2.5 GHz Power Amplifier

File Size 103.76K  /  2 Page

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    Microsemi
Part No. LX5518
OCR Text ... transistor (hbt) ic process (mocvd). it operates with a single positive voltage supply of 3-5v, and provides a power gain of 30db and an output power of +26dbm at 5v for 3% evm in the 2.4-2.5ghz. lx5518 also features an on-chip pow...
Description InGaP HBT 2.4 - 2.5 GHz Power Amplifier

File Size 122.94K  /  2 Page

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    Sirenea
Part No. SZA3044
OCR Text ...technology and fabricated with mocvd for an ideal combination of low cost and high reliability. this product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3-3.8 ghz bands. it can run from a 3v to ...
Description Power Amplifier

File Size 429.66K  /  8 Page

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For mocvd Found Datasheets File :: 117    Search Time::1.312ms    
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