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mos-transistors Datasheet PDF File

For mos-transistors Found Datasheets File :: 2625 Search Time::2.203ms
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				MOTOROLA[Motorola, Inc]
Part No.	MRF175GU MRF175GV
OCR Text	... WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs D CASE 375-04, STYLE 2 D MAXIMUM RATINGS Rating Drain-Source Voltage D...transistors. Since this test is performed at a fast sweep speed, heating of the device does not occu...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	183.29K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GV MRF175GU
OCR Text	... WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs D CASE 375-04, STYLE 2 D MAXIMUM RATINGS Rating Drain-Source Voltage D...transistors. Since this test is performed at a fast sweep speed, heating of the device does not occu...
Description	From old datasheet system N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	210.44K / 11 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175LU MRF175LV
OCR Text	...nued) Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and pack...transistors. Since this test is performed at a fast sweep speed, heating of the device does not occu...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	137.22K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175LV MRF175LU
OCR Text	...nued) Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and pack...transistors. Since this test is performed at a fast sweep speed, heating of the device does not occu...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	143.35K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF176 MRF176GU MRF176GV
OCR Text	.../150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs D CASE 375-04, STYLE 2 MAXIMUM RATINGS Rating Drain-Source Voltage Gat...transistors. Since this test is performed at a fast sweep speed, heating of the device does not occu...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	176.10K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF177
OCR Text	...mplifier. NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 8 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 ...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	184.73K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text	...3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Rev. 6 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA F...
Description	SEE A3282EUA-T CHOPPER STABILIZED LATCH W/TIN PLATING SEE A3282ELHLT-T RF Power Field Effect Transistors
File Size	504.66K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	...97 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA MR...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text	...3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA Fo...
Description	HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
File Size	486.59K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18085B MRF18085BLSR3 MRF18085BR3
OCR Text	...otes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA For ...
Description	RF Power Field Effect Transistors
File Size	607.07K / 12 Page	View it Online	Download Datasheet

For mos-transistors Found Datasheets File :: 2625 Search Time::2.203ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |