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TOSHIBA
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Part No. |
GT15J321
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Description |
Insulated Gate Bipolar transistor silicon N Channel IGBT High power switching Applications Fast switching Applications
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File Size |
175.02K /
7 Page |
View
it Online |
Download Datasheet
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TOSHIBA
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Part No. |
GT50J121
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Description |
Insulated Gate Bipolar transistor silicon N Channel IGBT High power switching Applications Fast switching Applications
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File Size |
156.40K /
6 Page |
View
it Online |
Download Datasheet
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TOSHIBA
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Part No. |
MP4410
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Description |
power MOS FET Module silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High power, High Speed switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load switching.
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File Size |
96.26K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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