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PHILIPS[Philips Semiconductors]
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| Part No. |
PHP11N50E PHW11N50E PHB11N50E
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| OCR Text |
...) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8".
January 1998
4
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS trans... |
| Description |
PowerMOS transistors Avalanche energy rated
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| File Size |
40.87K /
7 Page |
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IMP Inc
IMP[IMP, Inc]
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| Part No. |
C0810
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| OCR Text |
...sistance P+ Junction Depth Gate oxide Thickness Field oxide Thickness Bottom Poly Sheet Res. Gate Poly Sheet Resistance Metal-1 Sheet Resistance Metal-2 Sheet Resistance Passivation Thickness High Resistance Poly Capacitance Gate oxide Meta... |
| Description |
CMOS 0.8mm High-Resistance Poly for Analog
From old datasheet system
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| File Size |
29.05K /
2 Page |
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it Online |
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IMP[IMP, Inc]
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| Part No. |
C1004
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| OCR Text |
...sistance P+ Junction Depth Gate oxide Thickness Field oxide Thickness Poly Sheet Resistance Metal-1 Sheet Resistance Metal-2 Sheet Resistance Passivation Thickness
Symbol N-well(f) N+ xjN+ P+ xjP+ TGOX TFIELD POLY M1 M2 TPASS
Minimum ... |
| Description |
Process C1004
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| File Size |
30.83K /
2 Page |
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IMP Inc
IMP[IMP, Inc]
IMP Inc
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| Part No. |
C1210
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| OCR Text |
...sistance P+ Junction Depth Gate oxide Thickness Field oxide Thickness Gate Poly Sheet Resistance Bottom Poly Sheet Res. Metal-1 Sheet Resistance Metal-2 Sheet Resistance Passivation Thickness Capacitance Gate oxide Metal-1 to Poly-1 Metal-1... |
| Description |
Process C1210 CMOS 1.2mm Zero Threshold Devices
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| File Size |
33.75K /
4 Page |
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Bourns Electronic Solut...
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| Part No. |
MOV-14DXXXK MOV-14D561K
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| OCR Text |
...es mov-14dxxxk series - metal oxide varistor *rohs directive 2002/95/ec jan. 27, 2003 including annex and rohs recast 2011/65/eu june 8, 2011. specifcations are subject to change without notice. the device characteristics and parameters... |
| Description |
Metal oxide Varistor
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| File Size |
295.02K /
4 Page |
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IMP[IMP, Inc]
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| Part No. |
C1226
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| OCR Text |
...on Depth xjP+ High-Voltage Gate oxide Th HTGOX Gate oxide Thickness TGOX Interpoly oxide IPOX POLY1 Gate Poly Sheet Resistance M1 Metal-1 Sheet Resistance M2 Metal-2 Sheet Resistance Passivation Thickness TPASS High Voltage Section Rules Mi... |
| Description |
CMOS 1.2um 100V CMOS, Double Metal - Double Poly
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| File Size |
39.21K /
2 Page |
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it Online |
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IMP[IMP, Inc]
IMP Inc
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| Part No. |
C1227
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| OCR Text |
...oltage VTFP(P) Capacitance Gate oxide Metal-1 to Poly1 Metal-2 to Metal-1 Vertical NPN Transistor Beta Early Voltage Cut-Off Frequency Symbol COX CM1P CMM Symbol hFE VA f Minimum 0.7 36 Typical 0.9 1.4 VGS = 5V VDS = 30V 0.4 0.50 64.0 1.20 ... |
| Description |
ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles 30V的高压BiCMOS工艺1.2毫米双金双聚
From old datasheet system
HV BiCMOS 1.2mm 30V Double Metal - Double Poly
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| File Size |
26.81K /
2 Page |
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it Online |
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