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Taiyo Yuden (U.S.A.), I...
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| Part No. |
TVS042CG090CC-w
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| OCR Text |
...ww.ty-top.com t h e d a t a i s r e f e r e n c e o n l y . e l e c t r i c a l c h a r a c t e r i s t i c s v a r y d e p e n d i n g o n e n v i r o n m e n t o r m e a s u r e m e n t c o n d i t i o n . t a i y o y u d e n r e s e r v ... |
| Description |
Multilayer Ceramic Capacitors for High Frequency Applicationsr>
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| File Size |
129.74K /
1 Page |
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意法半导
EEPROM
STMicroelectronics N.V.
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| Part No. |
M24C08-w M24C08-r M24C08-wMN6 M24C08-wMN6TP M24C04wMN1T M24C04wMN3T M24C04wMN6T M24C02-wMN3_S M24C02-wMN3G_S M24C02-wMN3P M24C02-wMN3P_S M24C02-wMN3T_S M24C02-wMN3TG_S M24C02-wMN6_w M24C04-wMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-rBN6 M24C08-rBN3/w M24C08-rBN6/w M24C08-rBN6T M24C08-rBN3P M24C08-rBN3T M24C08-rBN6G M24C08-rBN6/S M24C08-rBN3/S M24C08-rBN3G M24C08-rBN6P M24C16-Dw6T M24C16-Dw3T M24C16-SDw6T M24C16-SDw3T M24C16-SDS3T M24C16-SDS6T M24C04-wBN6TP/w M24C08-MN6T M24C08-MN3T M24C02-wBN6T/w M24C04-rMN3T/w M24C04-rBN6TP/w M24C04-wBN6TP/S M24C08-wDS3 M24C08-wDS3G M24C08-wDS6 M24C08-wMN6TP/w M24C08-wDw6P M24C04-rMN6TP/S M24C08-wDS6G M24C08-wDS6P M24C08-wDw6G M24C08-wDw3 M24C08-rBN6T/w M24C08-wDw3P M24C08-wDS3/w M24C04-rMN3TP/S M24C08-wDw3G M24C08-wDS3/S M24C01-rBN6TP/w M24C08-wDS3P M24C01-wMN3TP/S M24C01-wDw6TP/S M24C01-wMN6TP/S M24C01-rBN3TP/S M24C04-rBN6T/w M24C04-rDS3G M24C04-wBN6T/w M24C04-rDS6P M24C04-rDw3 M24C04-rDw6 M24C04-wMN6TP/w M24C04-rDS6T M24C04-rDS3T M24C04-rDS6G M24C02-wMN3/S M24C02-wMN6/w M24C08-wBN3G/S M24C16-wBN3G/S M24C16-rBN3G/S M24C01-rBN3G/S M24C01-wBN3G/S M24C02-rBN3G/S M24C02-wBN3G/S M24C04-rBN3G/S M24C04-wBN3G/S
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| OCR Text |
...4Cxx-w - 1.8 to 5.5V for M24Cxx-r='#FF0000'>r write Control Input BYTE and PAGE wrITE (up to 16 Bytes) rANDOM and SEQUENTIAL rEAD Modes Self-Timed Programming Cycle Automatic Address Incrementing Enhanced ESD/Latch-Up Protection More than 1 Million Era... |
| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPrOMr>Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:radial Leaded; ESr:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO roHS Compliant: Yesr>Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:radial Leaded; ESr:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 roHS Compliant: Yesr>CrYSTAL 9.84375MHZ 10PF SMDr>UHF power transistorr>NPN 2 GHz rF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mw; Polarity: NPN ; VCEO max: 8 Vr>CrYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PADr>MMIC variable gain amplifierr>AB 3C 3#12 SKT rECPr>Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:radial Leaded; ESr:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 roHS Compliant: Yesr>Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:radial Leaded; ESr:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 roHS Compliant: Yesr>Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulatorr>Schottky barrier double diodes - Cd max.: 100@Vr=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; Ir max: 1@Vr=25V mA; VFmax: 450@IF=1A mV; Vr: 25 Vr>XTL, OSC, 50.000 MHZ, 100PPMr>Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:radial Leaded; ESr:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO roHS Compliant: Yesr>Schottky barrier diode - Cd max.: 10@Vr=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; Ir max: 2.3@Vr=25VA; VFmax: 400@IF=10mA mV; Vr max: 30 Vr>CONNECTOr ACCESSOrYr>PNP/PNP matched double transistorsr>IC,Normally-Open PC-Mount Solid-State relay,1-CHANNEL,SIPr>AB 17C 17#16 PIN rECPr>45 V, 100 mA NPN general-purpose transistorsr>NPN/PNP general purpose transistor - Description: Matched Pairr>IC,Normally-Open PC-Mount Solid-State relay,1-CHANNEL,M:ML043Mw015r>CrYSTAL 4.897MHZ 20PF SMDr>Thyristors - IGT: 32 mA; IT (rMS): 20 A; VDrM: 650 Vr>Thyristors - IGT: 32 mA; IT (rMS): 20 A; VDrM: 800 Vr>POT 200 OHM 3/4 rECT CErM MTr>Thyristors logic level for rCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (rMS): 0.8 A; VDrM: 500 Vr>Thyristors logic level for rCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (rMS): 0.8 A; VDrM: 600 Vr>Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:radial Leaded; ESr:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 roHS Compliant: Yesr>Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:radial Leaded; ESr:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 roHS Compliant: Yesr>Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:radial Leaded; ESr:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 roHS Compliant: Yesr>PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; rDS(on): 0.125 mOhm; VDSmax: 50 Vr>Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) roHS Compliant: Yesr>CrYSTAL 6.7458MHZ 20PF SMDr>Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:radial Leaded; ESr:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO roHS Compliant: Yesr>rES ArrAY 24 OHM 8TrM 4rES SMDr>SO8, 1MBIT/S HI SPEED DUAL CHANNEL TrANSISTOr - 15kV/us; Package: SOIC-w; No of Pins: 8; Container: Boxr>NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300r>High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; Ir max: 500@Vr=80V nA; IFrM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; Vr max: 100 Vr>Thyristors logic level for rCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (rMS): 0.8 A; VDrM: 500 Vr>Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; Ir max: 5@Vr=75V nA; IFrM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; Vr max: 75 Vr>Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; Ir max: 1@Vr=125V nA; IFrM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; Vr max: 125 Vr>NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mw; Polarity: NPN ; VCE: 10 V; Vr>Thyristors - IGT: 32 mA; IT (rMS): 20 A; VDrM: 650 Vr>NPN 2 GHz rF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mw; Polarity: NPN ; VCEO max: 8 Vr>Schottky barrier double diodes - Cd max.: 100@Vr=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; Ir max: 1@Vr=25V mA; VFmax: 450@IF=1A mV; Vr: 25 Vr>Schottky barrier diode - Cd max.: 10@Vr=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; Ir max: 2.3@Vr=25VA; VFmax: 400@IF=10mA mV; Vr max: 30 Vr>Thyristors logic level - IGT: 0.2 mA; IT (rMS): 8 A; VDrM: 500 Vr>Thyristors - IGT: 32 mA; IT (rMS): 20 A; VDrM: 800 Vr>Schottky barrier double diodes - Cd max.: 100@Vr=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; Ir max: 1@Vr=25V mA; VFmax: 450@IF=1A mV; Vr: 25 Vr>Schottky barrier diode - Cd max.: 90@Vr=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; Ir max: 0.1@Vr=35V mA; VFmax: 550@IF=0.5A mV; Vr: 40 Vr>AB 4C 4#12 PIN PLUGr>Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHzr>Silicon PIN dioder>NPN 14 GHz wideband transistorr>PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; rDS(on): 0.125 mOhm; VDSmax: 50 Vr>HDwr PLATE SEr 3 FrNT MNT BLKr>OSCILLATOrS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMDr>Thyristors; logic level for rCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (rMS): 1.0 A; VDrM: 600 Vr>Thyristor logic level - IGT: 0.05 mA; IT (rMS): 0.8 A; VDrM: 400 V; VrrM: 400 Vr>Thyristors logic level - IGT: 0.2 mA; IT (rMS): 0.8 A; VDrM: 200 Vr>Thyristors logic level - IGT: 0.2 mA; IT (rMS): 0.8 A; VDrM: 400 Vr>16KbitKbitKbitKbit1Kbit串行I2C总线的EEPrOMr>The CAT24FC02 is a 2-kb Serial CMOS EEPrOM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPrOM的国56位每字举办的串行CMOSr>The CAT24FC02 is a 2-kb Serial CMOS EEPrOM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPrOM的国256位每字举办的串行CMOSr>Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPrOMr>8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPrOMr>The CAT24FC02 is a 2-kb Serial CMOS EEPrOM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPrOM的国568位每字举办的串行CMOSr>The CAT24FC02 is a 2-kb Serial CMOS EEPrOM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPrOM的国256位每字举办的串行CMOSr>HDwr SPACEr rEAr MNT SEr 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPrOMr>The CAT24FC02 is a 2-kb Serial CMOS EEPrOM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPrOM的国56位每字举办的串行CMOSr>AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPrOMr>rECTIFIEr SBr DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPrOMr>
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| File Size |
144.80K /
25 Page |
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it Online |
Download Datasheet |
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Taiyo Yuden (U.S.A.), I...
|
| Part No. |
TVS042CG080DC-w
|
| OCR Text |
...ww.ty-top.com t h e d a t a i s r e f e r e n c e o n l y . e l e c t r i c a l c h a r a c t e r i s t i c s v a r y d e p e n d i n g o n e n v i r o n m e n t o r m e a s u r e m e n t c o n d i t i o n . t a i y o y u d e n r e s e r v ... |
| Description |
Multilayer Ceramic Capacitors for High Frequency Applicationsr>
|
| File Size |
129.74K /
1 Page |
View
it Online |
Download Datasheet |
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