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Vishay Semiconductors
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| Part No. |
IL213AT-X001
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| OCR Text |
...00 v v iorm 560 v p so 350 mw i si 150 ma t si 165 c creepage distance 4 mm clearance distance 4 mm insulation thickness 0.2 mm v f - forwa...phototransistor output, with base connection in soic-8 package vishay semiconductors fig. 11 - ... |
| Description |
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, LEAD FREE, SOIC-8
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| File Size |
126.05K /
7 Page |
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it Online |
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Vishay Semiconductors
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| Part No. |
SFH6186-3 SFH618A-4X001
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| OCR Text |
...00 v v iorm 890 v p so 400 mw i si 275 ma t si 175 c creepage distance standard dip-4 7 mm clearance distance standard dip-4 7 mm creepage d...phototransistor output, low input current vishay semiconductors fig. 6 - diode forward voltage (t... |
| Description |
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
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| File Size |
134.48K /
8 Page |
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it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1L51J0000F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 800 Sensitivity wavelength (nm) 400 to 1 200 Response time (s) 80
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arseni... |
| Description |
Gap : 3mm, Slit : 0.5mm Darlington Phototransistor Output, Case package Transmissive Photointerrupter
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| File Size |
146.32K /
12 Page |
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it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1L53VJ000F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 800 Sensitivity wavelength (nm) 400 to 1 200 Response time (s) 80
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arseni... |
| Description |
Gap : 5mm, Slit : 0.5mm Darlington Phototransistor Output, Case package Transmissive Photointerrupter
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| File Size |
144.58K /
12 Page |
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it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1S093HCZ0F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 20
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arseni... |
| Description |
Gap : 2mm Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter
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| File Size |
133.33K /
9 Page |
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it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1S094HCZ0F SHARPELECTRONICSCORP-GP1S094HCZ0F
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| OCR Text |
...ototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 20
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arseni... |
| Description |
Gap : 3mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter
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| File Size |
133.98K /
9 Page |
View
it Online |
Download Datasheet |
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