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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K9F6408Q0C-B K9F6408U0C-B K9F6408U0C-Q
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Description |
Circular connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:56; connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 8M x 8 Bit Bit NAND Flash memory
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File Size |
502.29K /
29 Page |
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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Part No. |
AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM28F020-120EI AM28F020-120ECB AM28F020-120EIB AM28F020-120EEB AM28F020-200FI AM28F020-120FEB AM28F020-200FCB AM28F020-200FIB AM28F020-120FCB AM28F020-120FI AM28F020-200FEB AM28F020-150ECB AM28F020-70ECB AM28F020-70FEB AM28F020-90FE AM28F020-150FC AM28F020-150FCB AM28F020-70FCB AM28F020-90FC AM28F020-90EC AM28F020-90FEB AM28F020-150FEB AM28F020-70EI AM28F020-70EE AM28F020-70EIB AM28F020-150EIB AM28F020-90EIB AM28F020-200EIB AM28F020-120PCB AM28F020-120PIB AM28F020-120JCB AM28F020-90EE AM28F020-90PCB AM28F020-90FCB AM28F020-90PE AM28F020-200JIB AM28F020-200JCB AM28F020-70PCB AM28F020-200PIB AM28F020-200JEB AM28F020-150PI AM28F020-70FIB AM28F020-90PI AM28F020-90PIB AM28F020-150JE AM28F020-70PEB
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Description |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash memory(509.20 k) Rectangular connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes Rectangular connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
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File Size |
276.20K /
35 Page |
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Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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Part No. |
HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB HY27LF161G2M-TCS HY27SF081G2M-TCP HY27SF081G2M-TCB HY27LF081G2M-TCB HY27LF161G2M-TCP HY27SF081G2M-F HY27UF081G2M-F HY27SF161G2M-FP HY27UF161G2M-FP HY27SF081G2M-V HY27UF081G2M-V HY27SF161G2M-VP HY27UF161G2M-VP HY27LF081G2M-VCB HY27LF081G2M-VCP HY27LF081G2M-VCS HY27LF081G2M-VEP HY27LF081G2M-VES HY27LF081G2M-TMB HY27LF081G2M-TMP HY27LF081G2M-TMS HY27LF161G2M-TMB HY27LF161G2M-TMP HY27LF161G2M-TMS HY27SF081G2M-TMB HY27SF081G2M-TMP HY27SF081G2M-TMS HY27SF161G2M-TMB HY27SF161G2M-TMP HY27SF161G2M-TMS HY27UF081G2M-TMB HY27UF081G2M-TMP HY27UF081G2M-TMS HY27UF161G2M-TMB HY27UF161G2M-TMP HY27UF161G2M-TMS HY27LF081G2M-VMB HY27LF081G2M-VMP HY27LF081G2M-VMS HY27LF161G2M-VMB HY27LF161G2M-VMP HY27LF161G2M-VMS HY27SF081G2M-VMB HY27SF081G2M-VMP HY27SF161G2M-VMB HY27SF161G2M-VMP HY27SF161G2M-VMS HY27UF081G2M-VMB HY27UF081G2M-VMP HY27UF081G2M-VMS HY27UF161G2M-VMB HY27UF161G2M-VMP HY27UF161G2M-VMS HY27LF081G2M-VEB HY27SF081G2M-VMS HY27LF081G2M-TPMP HY27LF081G2M-VPMP HY27SF081G2M-TPMP HY27SF081G2M-VPMP HY27LF161G2M-TPIS HY27SF161G2M-TPIS HY27LF161G2M-TIS HY27LF161G2M-VIS HY27SF161G2M-TIS HY27SF161G2M-VIS HY27LF161G2M-VPIS HY27SF081G2M-TEP HY27SF081G2M-TP
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Description |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes 3.3V Differential Transceiver 8-PDIP -40 to 85 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash memory 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 connector ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48 connector ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 COILTRONICS RoHS Compliant: Yes 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash memory
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File Size |
484.04K /
48 Page |
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Molex Electronics Ltd.
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Part No. |
0679558002 67955-8002
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Description |
2.50mm (.098") Pitch, SDIO memory Card connector, Reverse Mount, Stand OffHeight: 2.0mm (.079"), Standard, Push Push Type, Lead free 2.50mm (.098) Pitch, SDIO memory Card connector, Reverse Mount, Stand OffHeight: 2.0mm (.079), Standard, Push Push Type, Lead free
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File Size |
331.39K /
4 Page |
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Price and Availability
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