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  v 400v Datasheet PDF File

For v 400v Found Datasheets File :: 14240    Search Time::6.078ms    
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    APT5024BVFR

Advanced Power Technology Ltd.
Part No. APT5024BvFR
OCR Text v (R) FREDFET TO-247 Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology...400v 8 10 5 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs ...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS v 500v 22A 0.240 Ohm

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    APT5024BVR

ADPOW[Advanced Power Technology]
Part No. APT5024BvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 8 10 5 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs ...
Description POWER MOS v 500v 22A 0.240 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5025BN APT5030BN

ADPOW[Advanced Power Technology]
Part No. APT5025BN APT5030BN
OCR Text ...<0.5 % DUTY CYCLE NORMALIZED TO v = 10v @ 0.5 I [Cont.] GS D 0 ID, DRAIN CURRENT (AMPERES) 15 vDS> ID (ON) x RDS (ON)MAX. 250SE...400v 8 4 2 1 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description POWER MOS Iv 500v 23.0A 0.25 Ohm / 500v 21.0A 0.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH vOLTAGE POWER MOSFETS

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    APT5026HVR

ADPOW[Advanced Power Technology]
Part No. APT5026HvR
OCR Text v (R) TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the J...400v 8 16 10 5 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARG...
Description POWER MOS v 500v 18.5A 0.260 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5028BVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5028BvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 8 1 0.5 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS v是一个高电压N新一代通道增强型功率MOSFET
POWER MOS v 500v 20A 0.280 Ohm

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    APT5028SVR

ADPOW[Advanced Power Technology]
Part No. APT5028SvR
OCR Text v (R) D3PAK Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JF...400v 8 1 0.5 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description POWER MOS v 500v 20A 0.280 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 64.83K  /  4 Page

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    APT5030AVR

ADPOW[Advanced Power Technology]
Part No. APT5030AvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 8 16 1 0.5 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES ...
Description POWER MOS v 500v 14.7A 0.300 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5032CVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5032CvR
OCR Text v (R) TO-254 TO-254 Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology min...400v 8 16 1 0.5 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES ...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS v是一个高电压N新一代通道增强型功率MOSFET
POWER MOS v 500v 14A 0.320 Ohm

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    APT5040CNR

ADPOW[Advanced Power Technology]
Part No. APT5040CNR
OCR Text ...2 SEC. PULSE TEST NORMALIZED TO v = 10v @ 0.5 I [Cont.] GS D 2.0 vGS=10v 1.5 vGS=20v 1.0 8 4 TJ = +125C TJ = +25C 0 0 TJ = -55C ...400v 4 2 1 20 40 60 80 100 Qg , TOTAL GATE CHARGE (nC) g FIGURE 12, GATE CHARGES vs GATE-TO...
Description POWER MOS Iv 500v 13.0A 0.400 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH vOLTAGE POWER MOSFETS

File Size 52.43K  /  4 Page

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JvFR
OCR Text v (R) FREDFET Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimiz...400v 8 10 5 4 200 400 600 800 1000 1200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES ...
Description POWER MOS v 500v 77A 0.050 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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