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Silan Microelectronics
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Part No. |
SVD12N60T
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OCR Text |
...in -source breakdown voltage b vdss v gs =0v, i d =250a 600 -- -- v drain-source leakage current i dss v ds =600v, v gs =0v -- -- 10 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold voltag... |
Description |
600V N-CHANNEL MOSFET
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File Size |
692.38K /
8 Page |
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it Online |
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Silan Microelectronics
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Part No. |
SVF10N60S
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OCR Text |
...in -source breakdown voltage b vdss v gs =0v, i d =250a 600 -- -- v drain-source leakage current i dss v ds =600v, v gs =0v -- -- 1.0 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold volta... |
Description |
600V N-CHANNEL MOSFET
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File Size |
605.90K /
9 Page |
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it Online |
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New Jersey Semiconductors New Jersey Semi-Conductor P...
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Part No. |
MTP20N10E
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OCR Text |
...torage temperature range symbol vdss vdgr vgs vgsm id iom pd tj, tstg value 100 100 20 40 20 60 100 0.67 -6510 175 unit vdc vdc vdc vpk adc warts w/c c unclamped drain-to-source avalanche characteristics (tj <s 175"c) single pulse drain-to-... |
Description |
Trans MOSFET N-CH 150V 20A 3-Pin(3 Tab) TO-220AB Rail TMOS IV Power Field Effect Transistor
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File Size |
96.67K /
2 Page |
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it Online |
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New Jersey Semi-Conductor P...
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Part No. |
MTP25N05E
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OCR Text |
...torage temperature range symbol vdss vdgr vgs vgsm id idm pd tj, t8(g tmos power fets 25 amperes rds(on) = 0,07 ohm 50 volts .jj> to-220ab value so 60 20 40 25 80 100 0.8 -6510 150 unit vdc vdc vdc vpk artc watts ?c thermal characteristics ... |
Description |
TMOS IV Power Field Effect Transistor
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File Size |
96.42K /
2 Page |
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it Online |
Download Datasheet |
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Silan Microelectronics
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Part No. |
SVD10N65T SVD10N65FG
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OCR Text |
...in -source breakdown voltage b vdss v gs =0v, i d =250a 650 -- -- v drain-source leakage current i dss v ds =650v, v gs =0v -- -- 10 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold voltag... |
Description |
650V N-CHANNEL MOSFET
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File Size |
667.06K /
8 Page |
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it Online |
Download Datasheet |
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Silan Microelectronics
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Part No. |
SVD2N70T SVD2N70F
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OCR Text |
...in -source breakdown voltage b vdss v gs =0v, i d =250a 700 -- -- v drain-source leakage current i dss v ds =700v, v gs =0v -- -- 10 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold ... |
Description |
700V N-CHANNEL MOSFET
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File Size |
748.50K /
9 Page |
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it Online |
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TOSHIBA
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Part No. |
TK20X60U
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OCR Text |
...test circuit waveform i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 1.12 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t... |
Description |
Power MOSFET (N-ch 500V<vdss≤700V)
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File Size |
187.64K /
6 Page |
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it Online |
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TOSHIBA
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Part No. |
TK25A10K3
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OCR Text |
... e as (mj) 0 v 15 v i ar b vdss v dd v ds r g = 25 v dd = 25 v, l = 100 h ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as test circuit waveform r th ? t w pulse width t w (s) normalized transient th... |
Description |
Power MOSFET (N-ch single 60V<vdss≤150V)
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File Size |
301.95K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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