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ST Microelectronics
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Part No. |
irf530
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OCR Text |
irf530
s s s s s s
irf530
VDSS 100 V
RDS(on) <0.16
ID 14 A
TYPICAL RDS(on) = 0.115 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE
TO-220
3 1 2
D... |
Description |
N-CHANNEL 100V - 0.115 OHM - 14A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET
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File Size |
281.27K /
8 Page |
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it Online |
Download Datasheet |
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STMicroelectronics N.V.
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Part No. |
irf530
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OCR Text |
irf530 irf530fi n - channel enhancement mode power mos transistor n typical r ds(on) = 0.12 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n high current capability n 175 o c... |
Description |
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率MOSFET的)
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File Size |
53.13K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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