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  -175c Datasheet PDF File

For -175c Found Datasheets File :: 18578    Search Time::3.14ms    
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    Bivar Inc.
Part No. H-175c H-176C H-177C H-178C
OCR Text ...] 0.130 [3.3mm] 0.240 [6.1mm] h-175c h-176c h-177c h-178c x 1 4 thomas, irvine, ca. 92618 .x .1 date: date: 04/18/03 04/18/03 checked: m. chen designed: .xxx .005 .xx .01 david green t-1? (5mm) led holder tel: (949) 9...
Description
File Size 79.72K  /  1 Page

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    CPT3006010

Microsemi Corporation
Part No. CPT3006010
OCR Text ...Protection 300 Amperes/60 Volts 175C Junction Temperature Reverse Energy Tested ROHS Compliant *Add Suffix A for Common Anode, D for Doubler Electrical Characteristics I F(AV) 300 Amps Average forward current per pkg I F(AV) 150 Amps...
Description Schottky PowerMod

File Size 113.48K  /  2 Page

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    Wolfspeed
Part No. CPW5-1700-Z050B
OCR Text ...51.6 2.81.8 v i f = 50 a t j =175c i f = 25 a t j =175c i r reverse current 120 <20 750 <75 a v r = 1700 v t j =25c v r = 850 v t j =25c fig 2 250 <40 1600 <105 a v r = 1700 v t j =175c v r = 850 v t j =175c q c total capaci...
Description Z-Rec? Rectifier

File Size 414.89K  /  4 Page

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    DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text ...= 1000A, dIrr/dt = 3A/s Tcase = 175C, VR = 100V At Tvj = 175C At Tvj = 175C Min. Max. 1.3 50 1600 85 0.67 0.31 Units V mA C A V m CURVES 2500 Measured under pulse conditions 4000 2000 Instantaneous forward current, IF - (A) 3000 M...
Description Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE

File Size 94.85K  /  7 Page

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    Wolfspeed
Part No. CPW5-0650-Z050B
OCR Text ... j =25c fig 1 i f = 50 a t j =175c i f = 25 a t j =175c 1.81.3 2.2 i r reverse current 50 4 500 a v r = 650 v , t j =25c v r = 400 v , t j =25c fig 2 v r = 650 v , t j =175c v r = 400 v , t j =175c 200 6 1000 q c total capacitive ch...
Description Z-Rec? Rectifier

File Size 395.40K  /  4 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...rofile through-hole (IRF1010EL) 175C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET(R) Power MOSFET D VDSS = 60V RDS(on) = 12m Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utiliz...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 12m G S ID = 84A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanc...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET(R) Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11m G S Advanced HEXFET (R) Power MOSFETs from International Rectifier util...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11m G S ID = 85A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanc...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...hnology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 7.5m S Description Specifically designed for Automotive applications, this HEXFET(R) Power MO...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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