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  1 4a Datasheet PDF File

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    2N6295

SEME-LAB[Seme LAB]
Part No. 2N6295
OCR Text ...33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) APPLICATIONS * GENERAL PURPOSE AMPLIFIER * LOW FREQUENCY SWITCHING TO-66 P...4a 8A 80mA 50W 0.286 W/C -65 to 200C THERMAL CHARACTERISTICS RJC Thermal Resistance, Junction to ...
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR

File Size 14.63K  /  2 Page

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    2SA1128

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1128
OCR Text ... (Ta=25C) Ratings -25 -20 -7 -1 - 0.5 600 150 -55 ~ +150 Unit V V V A A mW C C 13.50.5 5.10.2 s Features 0.45 -0.1 1.27 +0....4a -3A -2A -1A - 0.6 - 0.4 - 0.3 - 0.1 - 0.03 Ta=75C 25C -25C - 0.2 - 0.01 - 0.01 ...
Description Silicon PNP epitaxial planer type

File Size 35.79K  /  2 Page

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    2SA2013 2SC5566

SANYO[Sanyo Semicon Device]
Part No. 2SA2013 2SC5566
OCR Text ...m 2038A [2SA2013/2SC5566] 4.5 1.6 1.5 Features * Adoption of FBET and MBIT processes. * High current capacitance. * Low collector-to-e...4a 100ms 10 1ms ms DC PC -- Ta 2SA2013 / 2SC5566 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Collector D...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA

SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
Part No. 2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA
OCR Text ...power dissipation. 0.85 0.7 1.5 2.3 0.5 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Collec...4a, IB=(-)200mA IC=(--)2.5A, IB=(-)50mA IC=(--)2.5A, IB=(-)50mA IC=(--)10A, IE=0 IC=(--)1mA, RBE= IE...
Description Low-Power, Single/Dual-Voltage &#181;P Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 9A I(C) | TO-252VAR
DC / DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP / NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SB1016

WINGS[Wing Shing Computer Components]
Part No. 2SB1016
OCR Text ...VEB= -5V , IC=0 VCE= -5.0V ,IC=-1.0A IC=-4a ,IB=-0.4mA VCE= -10V ,IC=-0.5A Min Typ Max -10 -10 100 -2.0 60 V MHZ Unit A A Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2...
Description PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

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    2SB1156 B1156

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1156 B1156
OCR Text ...3 11.00.2 5.00.2 3.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Packa...4a IC = -20A, IB = -2A IC = -8A, IB = - 0.4a IC = -20A, IB = -2A VCE = -10V, IC = - 0.5A, f = 10MHz ...
Description Silicon PNP epitaxial planar type(For power switching)

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    2SB1207

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SB1207
OCR Text 1 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Co...4a, IB = -8mA IC = -0.4a, IB = -8mA VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz ...
Description Silicon PNP epitaxial planer type(For low-voltage output amplification)

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    2SB825

WINGS[Wing Shing Computer Components]
Part No. 2SB825
OCR Text ... VEB= -5V , IC=0 VCE= -2V , IC=-1.0A IC=-4a , IB=-0.4a VCE= -2V , IC=-0.5A Min Typ Max -10 10 100 -0.4 8 V MHZ Unit A A Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)279...
Description PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

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    2SB827

WINGS[Wing Shing Computer Components]
Part No. 2SB827
OCR Text ... Unit V V V mA mA V 70 -0.1 -0.1 280 -0.4 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com
Description PNP PLANAR SILICON TRANSISTOR

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    2SB930 2SB930A 2SD1253A 2SD1253

PANASONIC[Panasonic Semiconductor]
Part No. 2SB930 2SB930A 2SD1253A 2SD1253
OCR Text 1.50.1 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 For power amplification Complementary to 2SD1253 and 2SD1253A s Features q q q Hi...4a, IB1 = - 0.4a, IB2 = 0.4a Conditions VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VCE = -30V, IB = 0 V...
Description Silicon PNP epitaxial planar type(For power amplification)

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