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  1800v Datasheet PDF File

For 1800v Found Datasheets File :: 625    Search Time::2.125ms    
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    DIM250PLM33-TS000 DIM250PLM33-TS000-15

Dynex Semiconductor
Part No. DIM250PLM33-TS000 DIM250PLM33-TS000-15
OCR Text ...25 0a v ge = 15v v ce = 1800v r g (on) = 10 ? r g (off) = 10 ? c ge = 56 nf l s ~ 15 0nh 2700 ns t f fall time 520 ns e off turn - off energy loss 480 mj t d(on) turn - on delay tim...
Description IGBT Chopper Module

File Size 353.79K  /  8 Page

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    CM1500HC-66R

Mitsubishi Electric Semiconductor
Part No. CM1500HC-66R
OCR Text ...RACTERISTICS (TYPICAL) 20 VCE = 1800v, IC = 1500A Tj = 25C 15 3 2 Cies GATE-EMITTER VOLTAGE (V) 10 CAPACITANCE (nF) 102 7 5 3 2 5 0 101 7 5 3 2 Coes Cres VGE = 0V, Tj = 25C f = 100kHz 23 5 7 100 23 5 7 101 23 ...
Description HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
1500 A, 3300 V, N-CHANNEL IGBT

File Size 109.36K  /  8 Page

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    DIM250PLM33-TL000

Dynex Semiconductor
Part No. DIM250PLM33-TL000
OCR Text ...25 0a v ge = 15v v ce = 1800v r g (on) = 10 ? r g (off) = 10 ? c ge = 56 nf l s ~ 15 0nh 2700 ns t f fall time 610 ns e off turn - off energy loss 650 mj t d(on) turn - on delay tim...
Description IGBT Chopper Module

File Size 319.75K  /  8 Page

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    DFM1200NXM33-A000

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DFM1200NXM33-A000
OCR Text ... 50Hz IEC1287. V1 = 2450V, V2 = 1800v, 50Hz RMS Test Conditions Max. 3300 1200 2400 720 5880 6 10 Units V A A A2s W kV pC THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Clearance: CTI (Critica...
Description Fast Recovery Diode Module Preliminary Information

File Size 120.10K  /  7 Page

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    DFM200PXM33-A000

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DFM200PXM33-A000
OCR Text ... 50Hz IEC1287. V1 = 2450V, V2 = 1800v, 50Hz RMS Test Conditions Max. 3300 200 400 20 925 6.0 10 Units V A A kA2s W kV pC THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Clearance: CTI (Critical...
Description Fast Recovery Diode Module Preliminary Information

File Size 152.30K  /  7 Page

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    DIM800NSM33-F000

Dynex Semiconductor
Part No. DIM800NSM33-F000
OCR Text ...e recovery energy IF =800A VCE =1800v dIF/dt =4000A/us Test Conditions IC = 800A VGE = 15V VCE = 1800v RG(ON) = 3.9 , RG(OFF)= 6.2 Cge = 220nF, L ~ 100nH IC = 800A, VGE = 15V, VCE = 1800v, RG(ON) = 2.7 , Cge = 220nF, L ~100nH Min Typ...
Description Single Switch IGBT Module

File Size 271.32K  /  8 Page

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    DIM800ECM33-F000

Dynex Semiconductor
Part No. DIM800ECM33-F000
OCR Text ...e recovery energy IF =800A VCE =1800v dIF/dt =4000A/us Test Conditions IC = 800A VGE = 15V VCE = 1800v RG(ON) = 3.9 , RG(OFF)= 6.2 Cge = 220nF, L ~ 100nH IC = 800A, VGE = 15V, VCE = 1800v, RG(ON) = 2.7 , Cge = 220nF, L ~100nH Min Typ...
Description IGBT Chopper Module

File Size 877.97K  /  8 Page

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    DIM800XSM33-F000

Dynex Semiconductor
Part No. DIM800XSM33-F000
OCR Text ...e recovery energy IF =800A VCE =1800v dIF/dt =4000A/us Test Conditions IC = 800A VGE = 15V VCE = 1800v RG(ON) = 3.9 , RG(OFF)= 6.2 Cge = 220nF, L ~ 100nH IC = 800A, VGE = 15V, VCE = 1800v, RG(ON) = 2.7 , Cge = 220nF, L ~100nH Min Typ...
Description Single Switch IGBT Module

File Size 277.57K  /  8 Page

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    DFM800NXM33-A000

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DFM800NXM33-A000
OCR Text ... 50Hz IEC1287. V1 = 2450V, V2 = 1800v, 50Hz RMS Test Conditions Max. 3300 800 1600 320 3845 6 10 Units V A A A2s W kV pC THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Clearance: CTI (Critical...
Description Fast Recovery Diode Module Preliminary Information

File Size 132.19K  /  7 Page

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    Eupec
Part No. FZ1200R33KF2
OCR Text ... ge = -15v ... + 15v, v ce = 1800v q g -22-c kollektor-emitter reststrom v ce = 3300v, v ge = 0v, t vj = 25c i ces - 0,15 12 ma collector-emitter cut-off current v ce = 3300v, v ge = 0v, t vj = 125c - 60 150 ma gate-emitter rests...
Description IGBT Power Module

File Size 159.72K  /  9 Page

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