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2.38mh Datasheet PDF File

For 2.38mh Found Datasheets File :: 51 Search Time::1.843ms
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					ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	VNQ690SP VNQ690SP13TR
OCR Text	...RIVER 1 OUTPUT 1 ILIM1 DEMAG 2 INPUT 1 INPUT 2 INPUT 3 INPUT 4 STATUS STATUS DRIVER 4 DRIVER 2 OUTPUT 2 ILIM2 DEMAG 3 LOGIC DRIVER 3 OUTPUT 3 ILIM3 DEMAG 4 OVERTEMP. 1 OVERTEMP. 2 OVERTEMP. 3 OVERTEMP. 4 OUTPUT 4 ILIM...
Description	QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
File Size	187.78K / 19 Page	View it Online	Download Datasheet

					ST Microelectronics STMicroelectronics
Part No.	VNQ810 VNQ81013TR
OCR Text	... VNQ810 BLOCK DIAGRAM VCC1,2 Vcc CLAMP OVERVOLTAGE UNDERVOLTAGE GND1,2 CLAMP 1 OUTPUT1 DRIVER 1 CLAMP 2 INPUT1 STATUS1 CURRENT LIMITER 1 LOGIC OVERTEMP. 1 OPENLOAD ON 1 CURRENT LIMITER 2 INPUT2 OPENLOAD OFF 1 STATU...
Description	QUAD CHANNEL HIGH SIDE DRIVER IC,PERIPHERAL DRIVER,4 DRIVER,BICMOS,SOP,28PIN,PLASTIC QUAD CHANNEL HIGH SIDE DRIVER
File Size	314.96K / 20 Page	View it Online	Download Datasheet

					http:// INTERSIL[Intersil Corporation]
Part No.	CA3100 CA3100E CA3100M CA3100T
OCR Text	2 OSS CA3100 38MHz, Operational Amplifier Features * High Open Loop Gain at Video Frequencies . . . . . . . . . . . . . . . . . . 42...38MH z, Operational Amplifier) /Autho r () /Keywords (Harris Semiconductor, single, operational ampl...
Description	38MHz, Operational Amplifier
File Size	127.85K / 7 Page	View it Online	Download Datasheet

					Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT10086BLC APT10086SLC
OCR Text	... FO AD IN 1000 13 52 30 40 370 2.96 300 13 30 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1300 STAT...38mH, R = 25W, Peak I = 13A j G L 1 Repetitive Rating: Pulse width limited by maximum junction ...
Description	POWER MOS VI 1000V 13A 0.860 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.77K / 2 Page	View it Online	Download Datasheet

					Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10086BVFR
OCR Text	...ts Amps 1000 13 52 30 40 370 2.96 -55 to 150 300 13 30 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Vo...38mH, R = 25, Peak I = 13A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 13A 0.860 Ohm
File Size	68.65K / 4 Page	View it Online	Download Datasheet

					Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10086BVR
OCR Text	...ts Amps 1000 13 52 30 40 370 2.96 -55 to 150 300 13 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dis...38mH, R = 25, Peak I = 13A j G L 1 Repetitive Rating: Pulse width limited by maximum junction ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 13A 0.860 Ohm
File Size	65.94K / 4 Page	View it Online	Download Datasheet

					ADPOW[Advanced Power Technology]
Part No.	APT10086SVR
OCR Text	...ts Amps 1000 13 52 30 40 370 2.96 -55 to 150 300 13 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dis...38mH, R = 25, Peak I = 13A j G L 1 Repetitive Rating: Pulse width limited by maximum junction ...
Description	POWER MOS V 1000V 13A 0.860 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	68.97K / 4 Page	View it Online	Download Datasheet

					IRF[International Rectifier]
Part No.	IRF6608
OCR Text	...nge Max. 30 12 55 13 10 100 2.1 1.4 42 0.017 -40 to + 150 Units V A W W/C C Thermal Resistance Parameter RJA RJA RJA RJC ...38mH Pulse width 400s; duty cycle 2%. Surface mounted on 1 in. square Cu board. RG = 25, IAS = ...
Description	lHEXFET Power MOSFET lHEXFET功率MOSFET
File Size	175.33K / 8 Page	View it Online	Download Datasheet

					FAIRCHILD[Fairchild Semiconductor]
Part No.	FQP6N80
OCR Text	...e 1) FQP6N80 800 5.8 3.67 23.2 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage ...38mH, IAS = 5.8A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 5.8A, di/dt 200A/s, VDD BVDSS, St...
Description	800V N-Channel MOSFET
File Size	673.08K / 8 Page	View it Online	Download Datasheet

					IRF[International Rectifier]
Part No.	IRFR3412 IRFU3412
OCR Text	... Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 0.38mH, RG = 25, IAS = 29A, (See Figure 12a) ISD 29A, d...
Description	100V Single N-Channel HEXFET Power MOSFET in a D-Pak package SMPS MOSFET
File Size	137.36K / 10 Page	View it Online	Download Datasheet

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