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SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
Q62702-B195 BBY35F Q62702-A775
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| Description |
From old datasheet system
silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V)
silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
SCREWDRIVER SET, 7 PCSCREWDRIVER SET, 7 PC; Kit contents:Slotted 75 4mm, 100 5.5mm, 150 6.5mm, Parallel 75 3mm, Phillips 60 No.0, 80 No.1, 100 No.2
silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) 硅肖特基二极管（搅拌机应用甚高频/超高频范围高速开关）
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| File Size |
17.62K /
2 Page |
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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
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| Part No. |
1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL658 FDLL660 FDLL661 1N967 FDLL916B 1N3064 1N3070 1N3595 1N4148 1N4149 1N4150 1N4305 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4938 1N6099 1N658 1N747 1N748 1N749 1N750 1N751 1N752 1N753 1N754 1N755 1N756 1N757 1N758 1N759 1N914A 1N914B 1N916A 1N916B 1N957 1N958 1N959 1N960 1N961 1N962 1N964 1N965 1N966 1N968 1N969 1N970 1N971 1N972 1N973 FDLL3064 FDLL3070 FDLL3595 FDLL3600 FDLL4148 FDLL4149 FDLL4150 FDLL4305 FDLL4446 FDLL4447 FDLL4448 FDLL4449 FDLL4450 FDLL4454 FDLL4938 FDLL914A FDLL914B FDLL916A FDLL6099
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| Description |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
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| File Size |
327.92K /
10 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TA4018F
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| Description |
Bipolar linear Integrated Circuit silicon Monolithic VHF Gain Control Amplifier Application
TOSHIBA Bipolar linear Integrated Circuit silicon Monolithic
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| File Size |
130.50K /
8 Page |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BFR106 Q62702-F1219
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| Description |
NPN silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
NPN silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers)
From old datasheet system
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| File Size |
57.96K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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