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  20v s Datasheet PDF File

For 20v s Found Datasheets File :: 37342    Search Time::2.704ms    
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    PAIRUI GROUP INC.
Part No. LMB-20v LMB20-V12 LMB20-V24
OCR Text 20v series, 20watt features: constant voltage output input voltage range 200-240vac short circuit, overload, and over t...s ripple -- --- -- 200 240 mv protection overload hiccup mode, it will recover automatically after f...
Description Constant voltage LED Drivers

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    IRG4BC30U-S IRG4BC30US

IRF[International Rectifier]
Part No. IRG4BC30U-s IRG4BC30Us
OCR Text ...kage Current -- -- 100 nA VGE = 20v switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eo...s 6.0 For both: Triangular wave: 5.0 Lo ad C u rre n t (A ) Duty cycle: 50% TJ = 125...
Description INsULATED GATE BIPOLAR TRANsIsTOR UltraFast speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)

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    IRG4BC30W-S IRG4BC30WS

IRF[International Rectifier]
Part No. IRG4BC30W-s IRG4BC30Ws
OCR Text ...kage Current -- -- 100 nA VGE = 20v switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eo...s 5.0 For both: Triangular wave: 4.0 Load C u rren t (A ) Duty cycle: 50% T J = 125C T...
Description INsULATED GATE BIPOLAR TRANsIsTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)

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    IRG4BH20K-S

International Rectifier
Part No. IRG4BH20K-s
OCR Text ...= 1200V, TJ = 150C 100 nA VGE = 20v switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eo...s VCC = 720v, TJ = 125C VGE = 15V, RG = 50 23 -- TJ = 150C, 28 -- IC = 5.0A, VCC = 960V ns 100 -- VG...
Description 1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package
INsULATED GATE BIPOLAR TRANsIsTOR

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    IRG4BC30U-S

International Rectifier, Corp.
Part No. IRG4BC30U-s
OCR Text ...eakage current 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector c...s www.irf.com 3 fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundament...
Description INsULATED GATE BIPOLAR TRANsIsTOR UltraFast speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速(VCEs和\u003d 600V电压的Vce(on)的典型。\u003d 1.95V,@和VGE \u003d 15V的,集成电路\u003d 12A条)
600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package

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    IRF[International Rectifier]
Part No. IRGBC40M-s
OCR Text ..., T J = 150C -- -- 100 nA VGE = 20v VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Te...s VCC = 360V, T J = 125C VGE = 15V, R G = 10, VCPK < 500V -- 28 -- TJ = 150C, -- 37 -- ns IC = 24A, ...
Description INsULATED GATE BIPOLAR TRANsIsTOR(Vces=600V, @Vge=15V, Ic=24A)
INsULATED GATE BIPOLAR TRANsIsTOR(Vces=600V @Vge=15V Ic=24A)

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    IRGBC30KD2-S

International Rectifier
Part No. IRGBC30KD2-s
OCR Text ...C = 12A, TJ = 150C 100 nA VGE = 20v switching Characteristics @ TJ = 25C (unless otherwise specified) Max. Units Conditions 58 IC = 14A ...s VCC = 360V, TJ = 125C VGE = 15V, RG = 23, VCPK < 500V Turn-On Delay Time ---64 ---TJ = 150C, see F...
Description INsULATED GATE BIPOLAR TRANsIsTOR

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    ELM32403LA-S

ELM Technology Corporation
Part No. ELM32403LA-s
OCR Text ...kage current igss vds=0v, vgs= 20v 250 na gate threshold voltage vgs(th) vds=vgs, id=-250 a -1.0 -1.5 -2.5 v on state drain current id(on...s 1 diode forward voltage vsd is =if , vgs=0v -1 v 1 max. body -diode continuous current is -1.3 a p...
Description single P-channel MOsFET

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    IRF[International Rectifier]
Part No. IRG4BC30FD-s
OCR Text ...= 12A IF = 12A, TJ = 150C VGE = 20v see Fig. 13 switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qge Qgc ...s VR = 200V IF = 12A see Fig. 7 A/s TJ = 25C TJ = 125C 2 www.irf.com IRG4BC30FD-s www...
Description INsULATED GATE BIPOLAR TRANsIsTOR WITH HYPERFAsT DIODE

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