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  2200v Datasheet PDF File

For 2200v Found Datasheets File :: 85    Search Time::2.343ms    
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    Mitsubishi Electric
Part No. CM400HG-66H
OCR Text ...= 60Hz (acc. to IEC 1287) VCC = 2200v, VCES 3300V, VGE = 15V Tj = 125C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Co...
Description 3rd-Version HVIGBT Modules

File Size 84.66K  /  7 Page

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    CM1200HC-66H CM1200HC-66H05 CM1200HC-66H09

Mitsubishi Electric Semiconductor
Part No. CM1200HC-66H CM1200HC-66H05 CM1200HC-66H09
OCR Text ...idal, f = 60Hz, t = 1min. VCC = 2200v, VCES 3300V, VGE = 15V Tj = 125C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Co...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 66.81K  /  7 Page

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    CM800HC-66H

Mitsubishi Electric Semiconductor
Part No. CM800HC-66H
OCR Text ...idal, f = 60Hz, t = 1min. VCC = 2200v, VCES 3300V, VGE = 15V Tj = 125C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Co...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 63.20K  /  7 Page

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    CM800E6C-66H

Mitsubishi Electric Semiconductor
Part No. CM800E6C-66H
OCR Text ...idal, f = 60Hz, t = 1min. VCC = 2200v, VCES 3300V, VGE = 15V Tj = 125C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Co...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 65.23K  /  7 Page

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    LT6557 LT6557CDHC LT6557IDHC LT6557IGN LT6557CGNPBF LT6557CGN

Linear Technology, Corp.
Part No. LT6557 LT6557CDHC LT6557IDHC LT6557IGN LT6557CGNPBF LT6557CGN
OCR Text 2200v/s Gain of 2, Single Supply Triple Video Amplifier with Input Bias Control FEATURES DESCRIPTION The LT(R)6557 is a high speed triple video amplifier with an internal fixed gain of 2 and a programmable DC input bias v...
Description 500MHz, 2200v/&#181;s Gain of 2, Single Supply Triple Video Amplifier with Input Bias Control; Package: SSOP; No of Pins: 16; Temperature Range: 0&deg;C to 70&deg;C 3 CHANNEL, VIDEO AMPLIFIER, PDSO16
500MHz, 2200v/μs Gain of 2, Single Supply Triple Video Amplifi er with Input Bias Control
500MHz, 2200v/楼矛s Gain of 2, Single Supply Triple Video Amplifi er with Input Bias Control
500MHz, 2200v/レs Gain of 2, Single Supply Triple Video Amplifi er with Input Bias Control

File Size 582.80K  /  12 Page

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    LT6558IDHC LT6558CDHC LT6558CGN LT6558IDHCTRPBF

Linear Technology, Corp.
Part No. LT6558IDHC LT6558CDHC LT6558CGN LT6558IDHCTRPBF
OCR Text 2200v/s Gain of 1, Single Supply Triple Video Amplifier with Input Bias Control FEATURES DESCRIPTION The LT(R)6558 is a high speed triple video amplifier with an internal fixed gain of 1 and a programmable DC input bias v...
Description 550MHz, 2200v/楼矛s Gain of 1, Single Supply Triple Video Amplifi er with Input Bias Control
550MHz, 2200v/μs Gain of 1, Single Supply Triple Video Amplifi er with Input Bias Control
550MHz, 2200v/&#181;s Gain of 1, Single Supply Triple Video Amplifier with Input Bias Control; Package: DFN; No of Pins: 16; Temperature Range: -40&deg;C to 85&deg;C 3 CHANNEL, VIDEO AMPLIFIER, PDSO16

File Size 193.50K  /  12 Page

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    CM1200HG-66H09

Mitsubishi Electric Semiconductor
Part No. CM1200HG-66H09
OCR Text ...short circuit pulse width VCC = 2200v, VCE VCES, VGE = 15V, Tj = 125C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES Cies Coes Cres Qg VCE(sat) td(on) tr Eon(10%) td(off) tf Eoff(10%) VEC trr Qrr Erec(10%) Item Collector cutoff cu...
Description HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 93.51K  /  7 Page

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    CM400HG-66H

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM400HG-66H
OCR Text ...= 60Hz (acc. to IEC 1287) VCC = 2200v, VCES 3300V, VGE = 15V Tj = 125C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Co...
Description 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

File Size 59.66K  /  7 Page

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    CM1200HG-66H

POWEREX INC
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM1200HG-66H
OCR Text ...= 60Hz (acc. to IEC 1287) VCC = 2200v, VCES 3300V, VGE = 15V Tj = 125C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Co...
Description 1200 A, 3300 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 63.95K  /  7 Page

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    DD106N DD106N18K-A

eupec GmbH
Xicon Passive Components
Part No. DD106N DD106N18K-A
OCR Text ...erature t stg - 40...+150 c 1) 2200v auf anfrage/ 2200v on request prepared by: c. drilling date of publication: 29.04.03 approved by: m. leifeld revision: 1 n netz-dioden-modul rectifier diode module datenblatt / data sheet dd106n bip...
Description 115 A, 1800 V, SILICON, RECTIFIER DIODE MODULE-3

File Size 228.33K  /  10 Page

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