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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4S563233F K4S563233FHN K4S563233FHN75
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| OCR Text |
...2P
0.5 mA 0.5 20 mA 8 4 mA 2 30 mA
ICC2PS CKE & CLK VIL(max), tCC = ICC2N CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed one time during 20ns
Precharge Standby Current in non power-down mode
CKE VIH(min), C... |
| Description |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
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| File Size |
138.59K /
12 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
K4S51323LF-F1H K4S51323LF-MC K4S51323L K4S51323LF-F1L K4S51323LF-F75 K4S51323LF-L
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| OCR Text |
... z
Min 0.27 0.45 -
Typ 1..30 0.32 11.0 6.40 13.0 11.2 0.80 0.50 -
Max 1.40 0.37 0.55 0.10
September 2004
K4S51323LF - M(E)C/L/F
ABSOLUTE MAXIMUM RATINGS
Parameter Voltage on any pin relative to Vss Voltage on VDD supply rel... |
| Description |
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
connector
From old datasheet system
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| File Size |
140.78K /
12 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4S51163LF-YPC/L/F1L K4S51163LF-YPC/L/F75
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| OCR Text |
...c = input signals are stable 30 ma operating current (burst mode) i cc 4 i o = 0 ma page burst 4banks activated t ccd = 2clks 110 100 100 ma 1 refresh current i cc 5 t rc t rc (min) 160 150 130 ma 2 self refresh current i ... |
| Description |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
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| File Size |
108.83K /
12 Page |
View
it Online |
Download Datasheet |
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