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ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
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| Part No. |
APT50GF60B2RD APT50GF60LRD
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| OCR Text |
... = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 60A, diF /dt = -480A/s, VR = 350V Forward Recovery Time IF = 60A, d...0 0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 1, Forward Voltage Drop vs Forward... |
| Description |
Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
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| File Size |
112.47K /
7 Page |
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GE[General Semiconductor]
N.A.
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| Part No. |
GFB75N03
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| OCR Text |
30V RDS(ON) 6.5m ID 80A
D
TO-263AB
0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min.
D
G
0.160 (4.06) 0.190 (4.83)
0.045 (1.14) 0.055 (1.40)
S
0.42 (10.66)
0.320 (8.13) 0.360 (9.14)
G PIN D S
0.575 (14.60) 0.625 (15.88... |
| Description |
N-channel Enhancement-mode MOSFET
TRANSISTOR|MOSFET|N-CHANNEL|30VV(BR)DSS|75AI(D)|TO-263AB
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| File Size |
98.61K /
5 Page |
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意法半导
STMicro
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| Part No. |
STB80NE03L-06 5472 -STB80NE03L-06
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| OCR Text |
30V - 0.005 - 80A - D2PAK STripFETTM POWER MOSFET
T YPE ST B80NE03L-06
s s s s s
V DSS 30 V
R DS(o n) < 0.006
ID 80 A
s
TYPICAL RDS(on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC A... |
| Description |
N-Channel 30V-0.005惟-80A- D2PAK STripFETTM Power MOSFET(N???MOSFET)
N-Channel 30V-0.005Ω-80A- D2PAK STripFETTM Power MOSFET(N功率MOSFET)
From old datasheet system
N - CHANNEL 30V - 0.005 - 80A - D 2 PAK STripFET TM POWER MOSFET
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| File Size |
84.51K /
8 Page |
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IR
http://
International Rectifier, Corp.
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| Part No. |
IRGPS40B12 IRGPS40B120U
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| OCR Text |
...5C 33 --- VGE = 0V --- pF VCC = 30V --- f = 1.0MHz TJ = 150C, IC = 160A, Vp =1200V FULL SQUARE VCC = 1000V, VGE = +15V to 0V RG = 4.7 TJ = 1...0 0 20 40 60 80 100 120 140 160 T C (C) 0 0 50 100 T C (C) 150 200
Fig. 1 - Maximum DC Collector ... |
| Description |
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package
INSULATED GATE BIPOLAR TRANSISTOR 绝缘栅双极晶体管
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| File Size |
112.22K /
10 Page |
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STMicro
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| Part No. |
STP80NE03L-06 5640
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| OCR Text |
30V - 0.005 - 80A - TO-220 STripFETTM POWER MOSFET
TYPE STP80NE03L-06
s s s s s
V DSS 30 V
R DS(on) < 0.006
ID 80 A
TYPICAL RDS(on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICAT... |
| Description |
N - CHANNEL 30V - 0.005 - 80A - TO-220 STripFET TM POWER MOSFET
From old datasheet system
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| File Size |
258.75K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB050AN06A0 FDP050AN06A0 FDP050AN06A0NL
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| OCR Text |
... 0V to 10V VGS = 0V to 2V VDD = 30V ID = 80A Ig = 1.0mA 3900 750 270 61 8 24 16 15 80 11 pF pF pF nC nC nC nC nC
Switching Characteristic...0 34 25 V V ns nC
Notes: 1: Starting TJ = 25C, L = 229H, IAS = 64A. 2: Pulse width = 100s.
(c)... |
| Description |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263AB
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-220AB
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| File Size |
498.80K /
11 Page |
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it Online |
Download Datasheet |
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