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  4.0a 400v Datasheet PDF File

For 4.0a 400v Found Datasheets File :: 2509    Search Time::2.391ms    
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    MS.SLW2 MS.SLW3 HMS20 MS.PS2 MS.SLJ2 MS.SLJ3 MSH6.3 MS1 MS.G55 MS.SLR2 MS.SLR3 MSW2.5 MSW20 MS10 MS20 MSW1.6 MSW10 MSH1

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Altech corporation
Part No. MS.SLW2 MS.SLW3 HMS20 MS.PS2 MS.SLJ2 MS.SLJ3 MSH6.3 MS1 MS.G55 MS.SLR2 MS.SLR3 MSW2.5 MSW20 MS10 MS20 MSW1.6 MSW10 MSH1 MS16 MS.SLG2 MS.SLG3 HMS01 HMS02 MSW1 MS.F55 MSW16 MSW6.3 MS04 MS1.6 MS016 HMS10 MSH1.6 MSH10 MS2.5 HMS11 MS025 MS6.3 MS.PV MSH2.5 MSH20 MSW4 MS25 MS4 MSH4
OCR Text 4-1, DIN VDE 0660 Part 102 Debido a su alta capacidad de ruptura con alta limitacion de corriente, los guardamotores MS suministran una opt...0A 1.6A 2.0A 2.5A 3.0A 3.5A 4.0a 5.0A 6.0A 8.0A 10A 13A 16A 20A 25A 32A 40A 50A 63A 1B Codigo ND...
Description MS016

File Size 784.62K  /  8 Page

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    SGB04N60 SGB04N6006

Infineon Technologies AG
Part No. SGB04N60 SGB04N6006
OCR Text ...25 c t c = 100 c i c 9.4 4.9 pulsed collector current, t p limited by t jmax i cpuls 19 turn off safe operating area v ...0a 10a 20a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0 .01a 0.1a 1a 10a dc 1...
Description Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

File Size 785.93K  /  11 Page

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    SGB02N6006

Infineon Technologies AG
Part No. SGB02N6006
OCR Text ..., junction ? case r thjc 4.2 thermal resistance, junction ? ambient 1) r thja 40 k/w electrical characteristic, at t ...0a 2a 4a 6a 8a 10a 12a 14a 16a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0 ....
Description Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

File Size 791.51K  /  11 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ... ID = 1mA 0.85 VGS = 10V, ID = 4.8A 4.0 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400v, VGS = 0V, TJ = 125C 100 VGS = 30V...0A 9.0 nC VDS = 400v 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 -...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ... ID = 1mA 0.85 VGS = 10V, ID = 4.8A 4.0 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400v, VGS = 0V, TJ = 125C 100 VGS = 30V...0A 9.0 nC VDS = 400v 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 -...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    SKB04N6007

Infineon Technologies AG
Part No. SKB04N6007
OCR Text ...25 c t c = 100 c i c 9.4 4.9 pulsed collector current, t p limited by t jmax i cpuls 19 turn off safe operating area ...0a 10a 20a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0 1a . 1a 1a 0a dc 1ms 20...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 1,147.37K  /  13 Page

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    INFINEON[Infineon Technologies AG]
Part No. SKW30N60HS Q67040-S4503
OCR Text ...20 40 3000 100 nA S 3 1.55 1.55 4 2.05 2.05 5 A 2.8 3.5 3.15 4.00 600 V Symbol Conditions Value min. Typ. max. Unit RthJA TO-247AC 40 RthJCD...0A 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of sw...
Description From old datasheet system
HIGH SPEED IGBT IN NPT-TECHNOLOGY

File Size 433.86K  /  14 Page

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    IKP20N60T IKP20N60TA IKW20N60T

Infineon Technologies AG
Infineon Technologies A...
Part No. IKP20N60T IKP20N60TA IKW20N60T
OCR Text ... ) i c = 29 0 a , v c e = v g e 4.1 4.9 5.7 zero gate voltage collector current i c e s v c e = 60 0 v , v g e = 0v t j =2 5 ? c t j =1 7 5 ...0a 10a 20a 30a 40a 50a 60a t c =110c t c =80c i c , c o l l e c t o r c u r r e n t 1v 10v 100v 10...
Description IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
   IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

File Size 741.32K  /  14 Page

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