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STMICROELECTRONICS
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Part No. |
STF15NM60N
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OCR Text |
...n resistance v gs = 10v, i d = 7a 0.270 0.299 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward transconductance v ds =15v, i d = 7a 10 s c iss ... |
Description |
14 A, 600 V, 0.299 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
592.14K /
18 Page |
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Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQA7N65C
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OCR Text |
7a, 650v, RDS(on) = 1.4 @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability
(R)
Description
These N-Channel enhancement mode power field effect transis... |
Description |
650v N-Channel MOSFET
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File Size |
714.37K /
8 Page |
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it Online |
Download Datasheet
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