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NEC[NEC]
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Part No. |
UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9JF UPD45128163G5-A10B UPD45128163G5-A10B-9JF UPD45128163G5-A75 UPD45128163G5-A75-9JF UPD45128163G5-A80 UPD45128163G5-A80-9JF UPD45128441 UPD45128441G5-A10 UPD45128441G5-A10-9JF UPD45128441G5-A10B UPD45128441G5-A10B-9JF UPD45128441G5-A75 UPD45128441G5-A75-9JF UPD45128441G5-A80 UPD45128441G5-A80-9JF UPD45128841 UPD45128841G5-A10 UPD45128841G5-A10-9JF UPD45128841G5-A10B UPD45128841G5-A10B-9JF UPD45128841G5-A75 UPD45128841G5-A75-9JF UPD45128841G5-A80 UPD45128841G5-A80-9JF
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OCR Text |
...m-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are ... |
Description |
128M-bit Synchronous DRAM 4-bank, LVTTL
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File Size |
1,081.23K /
92 Page |
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Download Datasheet
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Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
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Part No. |
M5M29FB800RV-80 M5M29FT800RV-80 M5M29FB800FP M5M29FB800RV-10 M5M29FB800RV-12 M5M29FB800VP 8MFSTD M5M29FB800FP-12 M5M29FB800VP-12 M5M29FT800FP-12 M5M29FB800VP-10 M5M29FT800FP-10 M5M29FT800VP-10 M5M29FT800RV-10 M5M29FT800RV-12 M5M29FB800FP-10 M5M29FT800VP-12 M5M29FB800VP-80 M5M29FT800FP M5M29FT800RV-80-10 M5M29FT800RV-80-12 M5M29FT800VP M5M29FT800VP-80
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OCR Text |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
DESCRIPTION
The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash M... |
Description |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY From old datasheet system 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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File Size |
150.57K /
14 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 TC55VBM316ASTN40 TC55VBM316ASTN55 TC55VBM316
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OCR Text |
...ORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION
The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba'... |
Description |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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File Size |
212.13K /
15 Page |
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it Online |
Download Datasheet
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Price and Availability
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