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    IPD50N06S4-09

Infineon Technologies AG
Part No. IPD50N06S4-09
OCR Text ...C=100C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipa...67A at 25C. Defined by design. Not subject to production test. 2) 3) Device on 40 mm x 40 mm x...
Description OptiMOS-T2 Power-Transistor
File Size 162.26K  /  9 Page

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