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31510 H0001 M1330 JANTX1 C5909 CS843 IM802 02584
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  high power silicon controlled Datasheet PDF File

For high power silicon controlled Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    New Jersey Semi-Conductor P...
Part No. C180 C180D
Description high power silicon controlled Rectifier

File Size 117.53K  /  2 Page

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    C150P

powerex power Semiconductors
Part No. C150P
Description high power silicon controlled Rectifier

File Size 1,074.39K  /  5 Page

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    New Jersey Semi-Conduct...
Part No. C150
Description high power silicon controlled Rectifier

File Size 176.17K  /  2 Page

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    VS-70TPS12PBF

Vishay siliconix
Part No. VS-70TPS12PBF
Description The 70TPS.. high Voltage Series of silicon controlled rectifiers are specifically designed for high and medium power switching and phase control applications

File Size 92.95K  /  7 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. 2N1909 2N1910 2N1911 2N1912 2N1913 2N1914 2N1915 2N1916
Description high power silicon controlled Rectifier 110 A RMS 25 to 1200 Volts

File Size 126.72K  /  1 Page

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    PCR406 PCR406-5 PCR406-6

UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
UTC[Unisonic Technologies]
Part No. PCR406 PCR406-5 PCR406-6
Description KPT 10C 10#20 SKT PLUG
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices 0.8 A, 400 V, SCR, TO-92
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices 星期PCR406可控硅整流器是高性能的规划扩散PNP器件
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices

File Size 61.79K  /  2 Page

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    2N640004 2N6401G 2N6426G 2N6405G 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405

ONSEMI[ON Semiconductor]
Part No. 2N640004 2N6401G 2N6426G 2N6405G 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405
Description silicon controlled Rectifier 16A 400V
Darlington Transistors NPN silicon
silicon controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS

File Size 74.06K  /  6 Page

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    Vishay Semiconductors
Part No. IRKLF102-08HJ IRKLF112-08HN IRKLF102-06HK IRKLF102-12HK
Description 164.85 A, 800 V, SCR
silicon controlled Rectifier, 250 A, 800 V, SCR, power, INT-A-PAK-5
silicon controlled Rectifier, 164.85 A, 600 V, SCR
silicon controlled Rectifier, 164.85 A, 1200 V, SCR

File Size 30.50K  /  1 Page

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    Q62702-F1129 BF998

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1129 BF998
Description silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- power Sharing on Output- Efficiency to 84%
silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

File Size 180.18K  /  8 Page

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    MCR310-010 MCR310-D

ON Semiconductor
Part No. MCR310-010 MCR310-D
Description silicon controlled Rectifier 10A 800V
silicon controlled Rectifiers Reverse Blocking Triode Thyristors

File Size 70.50K  /  4 Page

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