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high-power npn silicon transis Datasheet PDF File

For high-power npn silicon transis Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Pan Jit International Inc.
Part No.	BC847BS09
Description	npn GENERAL PURPOSE DUAL transis
File Size	159.62K / 5 Page	View it Online	Download Datasheet

				Pan Jit International Inc.
Part No.	IMZ2A
Description	COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER transis
File Size	585.64K / 5 Page	View it Online	Download Datasheet

				Fujitsu Component Limited. Fujitsu Microelectronics Fujitsu Media Devices Limited Toshiba Semiconductor Fujitsu Limited Fujitsu, Ltd.
Part No.	2SC2429
Description	silicon HIGH SPEED TRIPLE DIFFUSED npn POWER transisTOR 10 AMP,400 VOLT From old datasheet system silicon HIGH SPPED POWER transisTORS 高硅SPPED功率晶体
File Size	138.86K / 3 Page	View it Online	Download Datasheet

				International Rectifier, Corp. Semtech Corporation
Part No.	ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC0112 ISOPAC0119 ISOPAC02 ISOPAC0203 ISOPAC0204 ISOPAC0211 ISOPAC0212 ISOPAC0219 ISOPAC04 ISOPAC0403 ISOPAC0404 ISOPAC0411 ISOPAC0412 ISOPAC0419 ISOPAC06 ISOPAC0603 ISOPAC0604 ISOPAC0611 ISOPAC0612 ISOPAC12 ISOPAC1203 ISOPAC1204 ISOPAC1211 ISOPAC1212 ISOPAC1219 ISOPAC0619
Description	High Current High density Isolated silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存??? High Current High density Isolated silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??) High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒 HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY High Current High density Isolated silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
File Size	232.99K / 6 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q62702-F202
Description	npn silicon transistor with high Reve... From old datasheet system npn silicon transistors with High Reverse Voltage Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% npn silicon RF transisrors npn silicon transistors (High breakdown voltage l Low collector-emitter saturation voltage) npn硅晶体管（高耐压l低集电极发射极饱和电压）
File Size	170.57K / 4 Page	View it Online	Download Datasheet

				FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
Part No.	MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 MRF9200LR306 MRF9200LSR3 MW5IC2030MBR106 MW5IC2030NBR1065 MW6IC2015GNBR1 MW6IC2015NBR1 NE76184A-TI MJE3055T MJE2955T
Description	COMPLEMENTARY silicon POWER transisTORS COMPLEMETARY silicon POWER transisTORS silicon npn transisTOR HIGH VOLTAGE PNP POWER transisTOR silicon npn POWER DARLINGTON transisTOR RF Power Field Effect transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER transisTOR, TO-220AB
File Size	57.87K / 4 Page	View it Online	Download Datasheet

				CREE POWER
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				Microsemi, Corp. MICROSEMI[Microsemi Corporation]
Part No.	2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JANTX2N5038 JANTX2N5039 JANTXV2N5038
Description	npn HIGH POWER silicon transisTOR 20 A, 90 V, npn, Si, POWER transisTOR, TO-204AA npn HIGH POWER silicon transisTOR 2 A, 90 V, npn, Si, POWER transisTOR, TO-3 From old datasheet system (JAN2N5038 / JAN2N5039) npn HIGH POWER silicon transisTOR npn transistor
File Size	54.47K / 2 Page	View it Online	Download Datasheet

				UNISONIC TECHNOLOGIES CO LTD ??『绉???′唤?????? Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
Part No.	50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R 2SA1797-X-AB3-R 2SA2016L-AB3-R 2SA733-X-AE3-R 2SA733-X-AL3-R 2SA733L-X-AE3-R 2SA73305 2SB1132-X-AB3-R 2SB1132-X-TN3-R 2SB1132-X-TN3-T 2SB1188-P-AB3-R 2SB1188-X-AB3-R 2SB1188L-X-AB3-R 2SB1202-X-TN3-T 2SB1202L-X-T6C-K 2SB1202L-X-TM3-T 2SB1260-X-TN3-R 2SB1260-X-TN3-T 2SB1386-X-AB3-F-R 2SB1386L-X-AB3-F-R 2SB857-X-T6C-K 2SB857-X-TN3-R 2SB857-X-TN3-T 2SC1815-X-T92-A-B 2SC1815-X-T92-A-K 2SC1815L-X-T92-A-B 2SC181505 2SC3838-X-AE3-R 2SC3838-X-AL3-R 2SC3838L-X-AE3-R 2SC4774-AL3-R 2SC4793-TF3-T 2SC4793L-TF3-T 2SC5027-X-TA3-T 2SC5027-X-TF3-T 2SC5027E-X-TA3-T 2SC5027E-X-TF3-T 2SC5027EL-X-TA3-T 2SC5027L-X-TA3-T 2SC5353-TA3-T 2SC5353-TF3-T 2SD1804-X-TM3-T 2SD1804-X-TN3-R 2SD1804-X-TN3-T 2SD1816-X-TM3-F-T 2SD1816-X-TN3-F-K 2SD1816-X-TN3-F-R 2SD1857-X-T92-B 2SD1857-X-T92-K 2SD1857-X-T9N-B 2SD313-C-TA3-T 2SD313L-X-TA3-T 2SD882-X-T60-K 2SD882-X-TM3-T 2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2SD882SS-Q-AE3-R 2SD882SSL-X-AE3-R BA6208-D08-T BA6208-G09-T BA6208-S08-R 2SA1020L-Y-T9N-R 2SA1020L-O-AB3-B 2SA1020L-O-AB3-K 2SA1020L-O-AB3-R 2SA1020L-O-T9N-B 2SA1020L-O-T9N-K 2SA1020L-O-T9N-R 2SA1020L-X-AB3-R 2SA1020L-X-T9N-B 2SA1020L-X-T9N-K 2SA1020L-Y-AB3
Description	silicon PNP EPITAXIAL transisTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL transisTOR silicon PNP EPITAXIAL transisTOR 进步党硅外延晶体 REVERSIBLE MOTOR DRIVER npn EPITAXIAL PLANAR transisTOR HIGH CURRENT SWITCHIG APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS HIGH VOLTAGE npn transisTOR HIGH VOLTAGE AND HIGH RELIABILITY transisTOR npn silicon transisTOR HIGH FREQUENCY AMPLIFIER transisTOR, RF SWITCHING (6V, 50mA) HIGH-FREQUENCY AMPLIFIER transisTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC npn transisTOR silicon PNP transisTOR LOW FREQUENCY PNP transisTOR MEDIUM POWER LOW VOLTAGE transisTOR MEDIUM POWER transisTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL silicon transisTOR PNP EPITAXIAL PLANAR transisTOR 50 Amps, 60 Volts N-CHANNEL POWER MOSFET
File Size	195.74K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] OPTEK Technologies
Part No.	HCT7000MTXV HCT7000 HCT7000M HCT7000MTX
Description	N- Channel En hance ment Mode MOS transistor N- Channel Enhancement Mode MOS transis tor
File Size	241.16K / 2 Page	View it Online	Download Datasheet

For high-power npn silicon transis Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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